Semiconductor device

ABSTRACT

A semiconductor device with improved characteristics is provided. The semiconductor device includes a LDMOS, a source plug electrically coupled to a source region of the LDMOS, a source wiring disposed over the source plug, a drain plug electrically coupled to a drain region of the LDMOS, and a drain wiring disposed over the drain plug. The structure of the source plug of the semiconductor device is devised. The semiconductor device is structured such that the drain plug is linearly disposed to extend in a direction Y, and the source plug includes a plurality of separated source plugs arranged at predetermined intervals in the direction Y. In this way, the separation of the source plug decreases an opposed area between the source plug and the drain plug, and can thus decrease the parasitic capacitance therebetween.

CROSS-REFERENCE TO RELATED APPLICATIONS

The disclosure of Japanese Patent Application No. 2011-22390 filed onFeb. 4, 2011 including the specification, drawings and abstract isincorporated herein by reference in its entirety.

BACKGROUND

The present invention relates to semiconductor devices, and moreparticularly, to a technique effectively applied to a semiconductordevice including a laterally diffused metal-oxide-semiconductorfield-effect transistor (LDMOSFET).

In recent years, mobile communication devices (which are the so-calledmobile phones) using a communication system, such as a global system formobile communications (GSM) system, a personal communications service(PCS) system, a personal digital cellular (PDC) system, or a codeseparation multiple access (CDMA) system, have been widespread.

In general, this kind of mobile communication device includes an antennafor radiating and receiving radio waves, a high-frequency poweramplifier (radio frequency (RF) power module) for amplifying apower-modulated high-frequency signal to supply the amplified signal tothe antenna, a receiver for processing the high-frequency signalreceived by the antenna, a controller for controlling these components,and a cell (battery) for applying a power-supply voltage to thesecomponents.

The above high-frequency power amplifier is required to have a highbreakdown resistance against large variations in load. An amplificationdevice, such as a high-frequency power amplifier, uses a number oflaterally diffused MOS (LDMOS) transistors.

For example, the following Patent Document 1 (Japanese Unexamined PatentPublication No. 2010-50219) discloses a semiconductor device whichincludes a gate oxide film (24a) and a gate electrode (25a) formed overan N-type epitaxial layer (12) of a LDMOS portion (10a). In aninterlayer insulating layer (14) of the LDMOS portion (10a), contactwirings (26a to 26c) are formed to electrically coupling each sourceelectrode or each drain electrode to P⁺-type regions (17a to 17c) or anN⁺-type region (18).

The following Patent Document 2 (Japanese Unexamined Patent PublicationNo. 2009-32968) discloses a semiconductor device using a drain region(5) of a LDMOS as a cathode region (11) of a diode, and a back gateregion (4) of the LDMOS as an anode region (14) of the diode. In thesemiconductor device, a drain electrode (9) electrically coupled to thedrain region (5) and a source electrode (8) electrically coupled to theback gate region (4) are formed in contact holes of an interlayerinsulating layer (10).

The following Patent Document 3 (Japanese Unexamined Patent PublicationNo. 2007-173314) discloses a semiconductor device which includes ap-type punched layer (4) for electrically coupling a source region of aLDMOSFET to a source backside electrode (36) formed at the backside of asubstrate (1). The p-type punched layer (4) is formed of a p-typepolycrystal silicon film having a low resistance and doped withimpurities in a high concentration, or a metal film having a lowresistance. A source wiring for electrically coupling sources of basiccells of the above LDMOSFETs is only a wiring 24A. The number of wiringlayers forming a source wiring is set smaller than that of wiring layersforming drain wirings (interconnects 24B, 29B, and 33).

In the description of the present application, reference numerals inparentheses indicate respective elements disclosed in each patentdocument.

RELATED ART DOCUMENTS Patent Documents Patent Document 1

-   Japanese Unexamined Patent Publication No. 2010-50219

Patent Document 2

-   Japanese Unexamined Patent Publication No. 2009-32968

Patent Document 3

-   Japanese Unexamined Patent Publication No. 2007-173314

SUMMARY

The inventors are involved in studying and developing the LDMOSEFT(laterally diffused metal-oxide-semiconductor field effect transistor,laterally diffused MOSFET, or LDMISFET, hereinafter simply referred toas a “LDMOS”) which is used in the above-mentioned mobile communicationdevice.

The above LDMOS employs a structure in which impurities are laterallydiffused near a drain region in order to increase a breakdown voltage.The source region of the LDMOS is coupled to a source line via a sourcecontact, and the drain region of the LDMOS is coupled to a drain linevia a drain contact.

In this case, a parasitic capacitance is generated between a sourcecontact and a drain contact, and between a source line and a drain. Theparasitic capacitance is increased with the miniaturization of elements,which degrades the characteristics or performance of the semiconductordevice with the LDMOS.

In particular, a high-frequency power amplifier for the mobilecommunication device using the LDMOS is required to have a high powerefficiency for the necessity of holding an operating time of the device(equipment) for a long time on a single charge of the battery (cell).The power efficiency means the ratio of power output from thehigh-frequency power amplifier to power input into the high-frequencypower amplifier. The above-mentioned parasitic capacitance causesreduction in power efficiency, resulting in degradation of thecharacteristics of the entire semiconductor device (equipment).

Accordingly, it is an object of the present invention to improve thecharacteristics of a semiconductor device with a LDMOS. In particular,the invention has the object to improve the characteristics of thesemiconductor device with the LDMOS by decreasing the parasiticcapacitance of the semiconductor device.

Further, it is another object of the invention to improve thecharacteristics of the semiconductor device with the LDMOS whilereducing the size of the semiconductor device.

The outline of representative aspects of the invention disclosed in thepresent application will be briefly described below.

A semiconductor device according to a representative embodiment of theinvention disclosed in the present application includes: (a) a laterallydiffused MISFET, including: (a1) a gate electrode disposed over a firstsurface of a semiconductor substrate via a gate insulating film toextend in a first direction, and (a2) a source region disposed in thesemiconductor substrate on one side of the gate electrode, and a drainregion disposed in the semiconductor substrate on the other side of thegate electrode. The semiconductor device also includes (b) a sourcecontact disposed in a second region located on the one side of the gateelectrode over the semiconductor substrate to be electrically coupled tothe source region; (c) a source wiring disposed over the source contact;and (d) a drain contact disposed in a first region located on the otherside of the gate electrode over the semiconductor substrate to beelectrically coupled to the drain region. The semiconductor devicefurther includes (e) a drain wiring disposed over the drain contact. Thedrain contact is linearly disposed in the first region to extend in thefirst direction, and the source contact includes a plurality ofseparated source contacts arranged at predetermined intervals in thefirst direction in the second region.

A semiconductor device according to another representative embodiment ofthe invention disclosed in the present application includes: (a) alaterally diffused MISFET, including: (a1) a gate electrode disposedover a first surface of a semiconductor substrate via a gate insulatingfilm to extend in a first direction; and (a2) a source region disposedin the semiconductor substrate on one side of the gate electrode, and adrain region disposed in the semiconductor substrate on the other sideof the gate electrode. The semiconductor device also includes (b) asource contact disposed in a second region located on the one side ofthe gate electrode over the semiconductor substrate to be electricallycoupled to the source region; (c) a source wiring disposed over thesource contact; and (d) a drain contact disposed in a first regionlocated on the other side of the gate electrode over the semiconductorsubstrate to be electrically coupled to the drain region. Thesemiconductor device further includes (e) a drain wiring disposed overthe drain contact. The drain contact includes a plurality of separateddrain contacts disposed at first intervals in the first direction in thefirst region. The source contact includes a plurality of separatedsource contacts disposed at the first intervals in the first directionin the second region. Each of the separated drain contacts is shifted inthe first direction so as to be located between the separated sourcecontacts in the first direction.

A semiconductor device according to a further representative embodimentof the invention disclosed in the present application includes: (a) alaterally diffused MISFET, including: (a1) a gate electrode disposedover a first surface of a semiconductor substrate via a gate insulatingfilm to extend in a first direction, and (a2) a source region disposedin the semiconductor substrate on one side of the gate electrode, and adrain region disposed in the semiconductor substrate on the other sideof the gate electrode. The semiconductor device also includes (b) asource contact disposed in a second region located on the one side ofthe gate electrode over the semiconductor substrate to be electricallycoupled to the source region; (c) a source wiring disposed over thesource contact; and (d) a drain contact disposed in a first regionlocated on the other side of the gate electrode over the semiconductorsubstrate to be electrically coupled to the drain region. Thesemiconductor device further includes (e) a drain wiring disposed overthe drain contact. The drain contact includes a plurality of separateddrain contacts disposed at first intervals in the first direction in thefirst region. The source contact includes a plurality of separatedsource contacts disposed at first intervals in the first direction inthe second region. The respective separated drain contacts are arrangedin parallel such that a position of each of the separated drain contactsin the first direction corresponds to a position of each of therespective separated source contacts in the first direction. The drainwiring includes a plurality of separated drain wirings arranged atsecond intervals in the first direction in the first region.

A semiconductor device according to a still further representativeembodiment of the invention disclosed in the present applicationincludes: (a) a laterally diffused MISFET, including: (a1) a gateelectrode disposed over a first surface of a semiconductor substrate viaa gate insulating film to extend in a first direction, and (a2) a sourceregion disposed in the semiconductor substrate on one side of the gateelectrode, and a drain region disposed in the semiconductor substrate onthe other side of the gate electrode. The semiconductor device alsoincludes (b) a source contact disposed in a second region located on theone side of the gate electrode over the semiconductor substrate to beelectrically coupled to the source region; and (c) a drain contactdisposed in a first region located on the other side of the gateelectrode over the semiconductor substrate to be electrically coupled tothe drain region. The semiconductor device further includes (d) a drainwiring disposed over the drain contact. The source contact includes aplurality of separated source contacts arranged at predeterminedintervals in the first direction in the second region. No source wiringelectrically coupled to the source contact is formed over the sourcecontact.

The semiconductor device according to the following representativeembodiments of the invention disclosed in the present application canimprove its characteristics.

Further, the semiconductor device according to the followingrepresentative embodiments of the invention disclosed in the presentapplication can improve its characteristics, while reducing its size.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional perspective view exemplarily showing thestructure of a semiconductor device according to a first embodiment;

FIG. 2 is a cross-sectional view exemplarily showing the structure ofthe semiconductor device in the first embodiment;

FIG. 3 is a plan view showing a main part of the structure of thesemiconductor device in the first embodiment;

FIG. 4 is a cross-sectional view showing a main part of a manufacturingstep of the semiconductor device in the first embodiment;

FIG. 5 is a plan view showing a main part of the manufacturing step ofthe semiconductor device in the first embodiment;

FIG. 6 is a cross-sectional view showing a main part of anothermanufacturing step of the semiconductor device in the first embodiment,following the step shown in FIG. 4;

FIG. 7 is a cross-sectional view showing a main part of anothermanufacturing step of the semiconductor device in the first embodiment,following the step shown in FIG. 5;

FIG. 8 is a cross-sectional view showing a main part of anothermanufacturing step of the semiconductor device in the first embodiment,following the step shown in FIG. 6;

FIG. 9 is a cross-sectional view showing a main part of anothermanufacturing step of the semiconductor device in the first embodiment,following the step shown in FIG. 7;

FIG. 10 is a plan view showing a main part of another manufacturing stepof the semiconductor device in the first embodiment, specifically, apartial enlarged view of FIG. 9;

FIG. 11 is a cross-sectional view showing a main part of anothermanufacturing step of the semiconductor device in the first embodiment,following the step shown in FIG. 8;

FIG. 12 is a cross-sectional view showing a main part of anothermanufacturing step of the semiconductor device in the first embodiment,following the step shown in FIG. 9;

FIG. 13 is a plan view showing a main part of another manufacturing stepof the semiconductor device in the first embodiment, specifically, apartial enlarged view of FIG. 12;

FIG. 14 is a cross-sectional view showing a main part of anothermanufacturing step of the semiconductor device in the first embodiment,following the step shown in FIG. 11;

FIG. 15 is a cross-sectional view showing a main part of anothermanufacturing step of the semiconductor device in the first embodiment,following the step shown in FIG. 12;

FIG. 16 is a plan view showing a main part of a repeated structure ofLDMOSs in the first embodiment;

FIG. 17 is a plan view exemplarily showing an example of the structureof a power amplification module (chip);

FIG. 18 is a plan view showing a main part of the structure of asemiconductor device according to a second embodiment;

FIG. 19 is a plan view showing a main part of the structure of otherregions in the second embodiment;

FIG. 20 is a plan view showing a main part of the structure of asemiconductor device according to a third embodiment;

FIG. 21 is a plan view showing a main part of the structure of asemiconductor device according to a fourth embodiment;

FIG. 22 is a plan view showing a main part of the structure of asemiconductor device according to a fifth embodiment;

FIG. 23 is a plan view showing a main part of the structure of asemiconductor device according to a sixth embodiment;

FIG. 24 is a plan view showing a main part of the structure of asemiconductor device according to a seventh embodiment;

FIG. 25 is a plan view showing a main part of the structure of asemiconductor device according to an eighth embodiment;

FIG. 26 is a plan view showing a main part of the structure of asemiconductor device according to a ninth embodiment; and

FIG. 27 is a plan view showing a main part of the structure of asemiconductor device in a comparative example.

DETAILED DESCRIPTION

The following preferred embodiments may be described below by beingseparated into a plurality of sections or embodiments for convenience,if necessary, which are not independent from each other except whenspecified otherwise. One of the sections or embodiments is a modifiedexample, an application example, a detailed explanation, a supplementalexplanation, or the like of some or all of the others. When reference ismade to the number of elements or the like (including the number ofpieces, numerical values, quantity, range, etc.) in the followingdescription of the embodiments, the number thereof is not limited to aspecific number, and may be greater than, or less than, or equal to thespecific number, unless otherwise specified and except when definitelylimited to the specific number in principle.

It is also needless to say that components (including elements orprocess steps, etc.) employed in the following description of theembodiments are not always essential, unless otherwise specified andexcept when considered to be definitely essential in principle.Similarly, in the following description of the shapes, positionalrelations and the like of the components or the like in the embodimentsbelow, they will include those substantially analogous or similar totheir shapes or the like, unless otherwise specified and except whenconsidered not to be definitely so in principle, etc. The same goes forthe above-mentioned number (including the number of pieces, numericalvalue, quantity, range, and the like).

Now, preferred embodiments of the invention will be described below indetail based on the accompanying drawings. In all drawings forexplanation of the embodiments, members having the same function aredesignated by the same or related reference character, and thus arepeated description thereof will be omitted below. In the followingembodiments, the description of the same or like parts is not repeatedin principle if not necessary.

Among the drawings used for the embodiments, some cross-sectional viewsomit hatching for easy understanding. Also, some plan views makehatching for easy understanding.

First Embodiment

Now, the structure of a semiconductor device and a manufacturing methodthereof will be described in detail below with reference to theaccompanying drawings.

Description of Structure

FIGS. 1 to 3 are diagrams exemplarily showing the structure of asemiconductor device according to this embodiment. FIG. 1 is across-sectional perspective view thereof, FIG. 2 is a cross-sectionalview thereof, and FIG. 3 is a plan view of a main part thereof.

The specific structure of the semiconductor device of this embodimentwill be described below with reference to FIGS. 1 to 3.

The semiconductor device of this embodiment includes a LDMOS formed overa main surface of an epitaxial layer 2 located over a semiconductorsubstrate 1.

The LDMOS includes a drain region comprised of a first n⁻-type drainregion 10, a second n⁻-type drain region 13, and an n⁺-type drain region14; a source region comprised of an n⁻-type source region 11 and ann⁺-source region 15; and a gate electrode G formed between the sourceand drain regions (in a channel formation region) via a gate insulatingfilm 8.

The LDMOS is one kind of MOSFET elements, which has the followingfeatures (first to third features).

The first feature is that the LDMOS enables a high-voltage operation ina short channel length with a lightly doped drain (LDD) region formed onthe drain side of the gate electrode G. That is, the drain of the LDMOSis comprised of the n⁺-type region (n⁺-type drain region 14) having ahigh impurity concentration, and a LDD region (comprised of the firstn⁻-type drain region 10 and the second n⁻-type drain region 13) havingan impurity concentration lower than that of the n⁺-type region. Then⁺-type region (n⁺-type drain region 14) is formed spaced apart from thegate electrode G via the LDD region. This arrangement can achieve a highbreakdown voltage. The amount of charges (concentration of impurities)in the LDD region on the drain side and the distance between the end ofthe gate electrode G and the n⁺-type drain region (high-concentrationdrain region) 14 are preferably optimized such that the breakdownvoltage of the LDMOS is maximized.

The second feature is that the LDMOS has a p-type well (p-type baseregion) 7 for a punch through stopper formed in the source region on thesource side (n⁻-type source region 11 and n⁺-type source region 15) andthe channel formation region. On the drain side (in the drain region) ofthe LDMOS, the p-type well 7 is not formed, or formed so as to be incontact with only a part of the end of the drain region on the sidecloser to the channel formation region. In short, the drain region(under the drain region comprised of the first n⁻-type drain region 10,the second n⁻-type drain region 13, and the n⁺-type drain region 14) hasan area where the p-type well 7 is not formed. In other words, thep-type well 7 is not formed at least under the n⁺-type drain region 14forming the drain.

The third feature is that in the LDMOS, the source region (n⁻-typesource region 11 and n⁺-type source region 15) and the drain region(first n⁻-type drain region 10, second n⁻-type drain region 13, andn⁺-type drain region 14) are asymmetric with respect to the gateelectrode G.

Particularly, in the LDMOS, the distance between the n⁺-type source 15forming the source region and the end on the source region side of thegate electrode G (hereinafter referred to as a “DS”), and the distancebetween the n⁺-type drain region 14 forming the drain and the end on thedrain region side of the gate electrode G (hereinafter referred to as a“DD”) are asymmetric and thus has the following relationship: DS<DD.

Next, the shape of a pattern (shape in the planar view from an uppersurface) of each of the drain region, the source region, and the gateelectrode G forming the above LDMOS will be described below.

As shown in FIG. 3, the gate electrode G extends in the direction Y. Thegate electrode G is disposed such that the source region extends in thedirection Y in the region positioned on one side of the gate electrode G(on the left side of the gate electrode G in FIG. 3, or in the firstregion). Further, the gate electrode G is disposed such that the drainregion extends in the direction Y in the region positioned on the otherside of the gate electrode G (on the right side of the gate electrode Gin FIG. 3, or in the second region).

A metal silicide layer 17 is formed over the drain region, sourceregion, and gate electrode G forming the above LDMOS (see FIG. 1 and thelike).

Although not shown in FIG. 3, as shown in FIG. 1, the source region iselectrically coupled to source plugs P1S via the metal silicide layer17. The drain region (n⁺-type drain region 14) is electrically coupledto the drain plug P1D via the metal silicide layer 17. Although notshown in FIG. 1, the gate electrode G is electrically coupled to a gateplug P1G via the metal silicide layer 17 (see FIG. 9).

The drain plug P1D is formed in the region positioned on one side of thegate electrode G (on the right side of the gate electrode G in FIG. 3),and the source plug P1S is formed in the region positioned on the otherside of the gate electrode G (on the left side of the gate electrode Gin FIG. 3).

As shown in FIG. 3, the drain plug P1D is linearly formed to extend inthe direction Y. In other words, the drain plug P1D has a rectangularpattern shape (shape in the planar view from an upper surface) having along side extending in the direction Y.

The source plug P1S is comprised of a plurality of separated sourceplugs (separated source contacts) P1S. That is, the separated sourceplugs P1S each having the square pole shape are arranged in the array inthe directions X and Y. In other words, the shape of the pattern (shapein the planar view from an upper surface) of the separated source plugsP1S is rectangular. The separated source plugs P1S are disposed atpredetermined intervals in the direction Y. The separated source plugsP1S arranged in the direction Y are hereinafter referred to as aseparated source plug column. Referring to FIG. 3, three columns ofseparated source plugs are disposed in the direction X at predeterminedintervals in the region on the left side of the gate electrode G. In thepresent specification, the “source plug” and the “separated source plug”are designated by the same reference character “P1S”. Unless otherwisespecified, the term “source plug” means all of the separated sourceplugs P1S.

As shown in FIGS. 1 and 2, the drain wiring M1D is disposed over thedrain plug P1D, and the source wiring M1S is disposed over the sourceplugs P1S. Although not shown in FIGS. 1 and 2, the gate wiring M1G isdisposed over the gate plug P1G (see FIG. 9). As shown in FIG. 3, thedrain wiring M1D is linearly disposed to extend in the direction Y so asto cover the drain plug P1D. The source wiring M1S is linearly disposedto extend in the direction Y so as to cover the separated source plugsP1S. The drain wiring M1D, the source wiring M1S, and the gate wiringM1G serve as a first layer wiring.

As shown in FIGS. 1 and 3, the drain wiring M1D is coupled to the drainwiring M2D serving as a second layer wiring via a drain plug P2D. Thedrain wiring M2D is coupled to a drain wiring M3D serving as a thirdlayer wiring via a drain plug P3D.

In this embodiment, the source plug P1S is not shaped linearly, unlikethe drain plug P1D, and is comprised of the separated source plugs P1S,which can decrease an area where the source plugs P1S are opposed to thedrain plug P1D. FIG. 27 shows a plan view of a semiconductor device inwhich source plugs P1S are linearly formed like the drain plug P1D, as acomparative example.

Thus, by decreasing the opposed area between the source plugs P1S andthe drain plug P1D, the parasitic capacitance between the source plugP1S and the drain plug P1D can be reduced. Likewise, the parasiticcapacitance between the source plug P1S and the drain wiring M1D can bereduced. Also, the parasitic capacitance between the source plugs P1Sand other wirings (M2D, M3D, and the like) can be reduced.

As a result, the power amplification circuit or the like using the LDMOSof this embodiment can improve the characteristics of a circuit,specifically, the power efficiency. Thus, the characteristics orperformance of the semiconductor device can be improved.

Description of Manufacturing Method

Referring now to FIGS. 4 to 16, a manufacturing method of thesemiconductor device in this embodiment will be described below, whileclarifying the structure of the semiconductor device. FIGS. 4 to 16 arecross-sectional views or plan views showing main parts of themanufacturing steps of the semiconductor device in this embodiment. Thecross-sectional view of the main part corresponds to, for example, across-sectional view taken along the line B-B of the plan view of themain part.

First, the manufacturing steps will be described below based on FIGS. 4and 5. As shown in FIG. 4, a semiconductor substrate 1 (hereinaftersimply referred to as a “substrate”) formed of, for example, a p⁺-typesilicon (Si) single crystal and having a low resistivity (specificresistance) of, for example, about 1 to 10 mΩcm is prepared. Then, anepitaxial layer (semiconductor layer) 2 is formed of p-type singlecrystal silicon over a main surface of the substrate (semiconductorsubstrate, or semiconductor wafer) 1 by the known epitaxial growthmethod, for example, in a thickness of about 2 μm so as to have aresistivity of about 20 Ω·cm. The epitaxial layer 2 is a semiconductorlayer. The concentration of impurities of the epitaxial layer 2 is lowerthan that of the substrate 1. The resistivity of the epitaxial layer 2is higher than that of the substrate 1. The combination of the substrate1 and the epitaxial layer 2 can be regarded as the semiconductorsubstrate.

Then, a part of the epitaxial layer 2 is etched using thephotolithography and dry-etching to form trenches reaching the substrate1. Subsequently, a p-type polycrystal silicon film is deposited over theepitaxial layer 2 containing the insides of the trenches by a chemicalvapor deposition (CVD) method or the like, and then a part of the p-typepolycrystal silicon film outside the trenches is removed by an etchingback method or the like. Thus, a p-type embedded layer (sinker, p-typesemiconductor layer) 3 is formed of the p-type polycrystal silicon filmembedded in each trench. Each p-type embedded layer 3 penetrates theepitaxial layer 2, so that the bottom of the p-type embedded layer 3reaches the substrate 1.

As shown in FIG. 5, the two p-type embedded layers 3 are provided closeto each other to make a pair of embedded layers. A plurality of thepairs are disposed at predetermined intervals in the direction Y to formopposed columns of the p-type embedded layers 3. FIG. 5 illustrates twocolumns of these pairs.

In this way, the p-type embedded layers 3 having a small parasiticresistance can be formed by filling the trenches with the p-typepolycrystal silicon film doped with impurities in a high concentration.Thus, the concentration of impurities of the p-type embedded layer 3 ishigher than that of the impurities of the epitaxial layer 2, and theresistivity of the p-type embedded layer 3 is lower than that of theepitaxial layer 2. Alternatively, the embedded layer having a smallparasitic resistance may be formed by filling each trench with a metalfilm instead of the polycrystal silicon film.

Then, element isolation regions are formed of an insulator at the mainsurface of the epitaxial layer 2, for example, by a shallow trenchisolation (STI) method or a local oxidization of silicon (LOCOS) method.The element isolation region is not shown in FIGS. 4 and 5. For example,trenches are formed in the epitaxial layer 2 by etching and aninsulating film, such as a silicon oxide film, is embedded in eachtrench, so that the element isolation regions can be formed in theepitaxial layer 2. The formation of the element isolation regions definean active region Ac with a cell of the LDMOS formed therein, at the mainsurface of the substrate 1 (at the main surface of the epitaxial layer2) (see FIG. 3). The active region Ac is a region enclosed by theelement isolation regions.

Then, the following steps will be described below based on FIGS. 6 and7. As shown in FIG. 6, p-type impurities, such as boron (B), areion-implanted into parts of the epitaxial layer 2 using a photoresistfilm (not shown) in a predetermined shape as an ion implantationinterrupting mask, so that p-type wells (p-type base regions, p-typesemiconductor regions) 7 for the punch through stopper are formed. Thep-type well 7 serves as the punch through stopper for suppressing theextension of a depletion layer from the drain region of the LDMOS to thesource region thereof. The p-type well 7 is mainly formed of a sourceregion and a channel formation region of the LDMOS. The p-type well 7 isalso used for adjustment of a threshold of the LDMOS.

Then, after cleaning the surface of the epitaxial layer 2 by ahydrofluoric acid or the like, the substrate 1 is subjected to the heattreatment (thermal oxidation process) for example, at about 800° C., sothat the gate insulating film 8 is formed of a silicon oxide film or thelike over the surface of the epitaxial layer 2, for example, in athickness of about 11 nm. The gate insulating film 8 may be a siliconoxide film containing nitrogen, which is the so-called oxynitride film,instead of a thermally-oxidized film. A silicon oxide film may bedeposited over the thermally-oxidized film by the CVD method, wherebytwo layers of these oxide films may form the gate insulating film 8.

Then, the gate electrode G is formed over a gate insulating film 8. Inorder to form the gate electrode G, for example, an n-type polycrystalsilicon film (doped polycrystal film) is deposited over the main surfaceof the epitaxial layer 2 (that is, the gate insulating film 8) by theCVD method or the like, and patterned by the photolithography anddry-etching. Thus, the gate electrode G formed of the patterned n-typepolycrystal silicon film is formed over the surface of the p-type well 7via the gate insulating film 8.

Then, n-type impurities, such as arsenic (As), are ion-implanted into apart of the surface of the p-type well 7 using the photoresist film (notshown) in a predetermined shape as an ion implantation interrupting maskto thereby form the n⁻-type source region 11. The n⁻-type source region11 is formed in a self-alignment manner with the gate electrode G. Theion implantation is performed at a low acceleration energy to therebyform the shallow n⁻-type source region 11, which can suppress thediffusion of impurities from the source region to the channel formationregion. Thus, the reduction in threshold voltage can be suppressed.

Then, a sidewall spacer (sidewall insulating film) SW1 is formed of aninsulating film, such as a silicon oxide film, at each sidewall of thegate electrode G. The sidewall spacer SW1 can be formed, for example, bydepositing an insulating film, such as a silicon oxide film, over thesubstrate 1 by the CVD method or the like, and applying the anisotropicetching to the insulating film. Then, n-type impurities, such asphosphorus (P), are ion-implanted into a part of the epitaxial layer 2using a photoresist film (not shown) having openings at an upper part ofthe drain region as an ion implantation interrupting mask to therebyform a first n⁻-type drain region (first low concentration n-type drainregion, and first n-type lightly doped drain (LDD) region) 10. The firstn⁻-type drain regions 10 are formed in a self-alignment manner with thesidewall spacers SW1. By decreasing the concentration of impurities ofthe first n⁻-type drain region 10, the depletion layer between the gateelectrode G and the drain expands to thereby reduce a feedback capacity(parasitic capacitance between the drain and gate electrode, namely,Cgd) formed therebetween.

Then, p-type impurities, such as boron (B), are ion-implanted into thep-type well 7 using a photoresist film (not shown) in the predeterminedshape as an ion implantation interrupting mask to thereby form a p-typehalo 12 under each n⁻-type source region 11. At this time, theimpurities are obliquely ion-implanted at an angle of 30 degrees withrespect to the main surface of the substrate 1. The p-type halo region12 is not necessarily formed. The formation of the halo region furthersuppresses the diffusion of the impurities from the source region intothe channel formation region, and suppresses the short-channel effect.Further, the reduction of threshold voltage can be suppressed.

Then, a sidewall spacer (sidewall insulating film) SW2 is formed of aninsulating film, such as a silicon oxide silicon film, at each sidewallof the gate electrode G (sidewall spacer SW1). The sidewall spacer SW2can be formed, for example, by depositing an insulating film, such as asilicon oxide film, over the substrate 1 by the CVD method or the like,and applying the anisotropic etching to the insulating film. Then,n-type impurities, such as phosphorus (P), are ion-implanted into a partof the first n⁻-type drain region 10 using a photoresist film (notshown) having openings at an upper part of the drain region as an ionimplantation interrupting mask. Thus, a second n⁻-type drain region(second low concentration n-type drain region, or second n-type lightlydoped drain (LDD) region) 13 is formed in a part of the first n⁻-typedrain region 10 in a self-alignment manner with the sidewall spacers SW1and SW2 formed at the sidewall on the drain side of the gate electrodeG.

Since the impurities implanted in the formation step of the secondn⁻-type drain region 13 are of the same conduction type (P) in theformation step of the first n⁻-type drain region 10, the concentrationof impurities of the second n⁻-type drain region 13 is higher than thatof the first n⁻-type drain region 10. That is, the second n⁻-type drainregion 13 has a resistance lower than that of the first n⁻-type drainregion 10, and thus can reduce the on resistance (Ron).

The first type drain region 10 is formed in a self-alignment manner withthe sidewall spacer SW1 at the sidewall of the gate electrode. Thesecond n⁻-type drain region 13 is formed in a self-alignment manner withthe sidewall spacer SW2 at the sidewall of the gate electrode G. Thesecond n⁻-type drain region 13 is formed spaced apart from the gateelectrode G in a thickness corresponding to the thickness of thesidewall spacers SW1 and SW2 along the gate length direction. Thus, eventhe high concentration of impurities of the second n⁻-type drain region13 hardly affects the feedback capacity (Cgd). The acceleration energyof ion implantation in forming the second n⁻-type drain region 13 is atthe same level as that of ion implantation in forming the first n⁻-typedrain region 10, whereby the junction depth of the second n⁻-type drainregion 13 is substantially the same as that of the first n⁻-type drainregion 10.

Then, n-type impurities, such as arsenic (As), are ion-implanted into apart of the second n⁻-type drain region 13 and the p-type well 7 of thesource region using a photoresist film (not shown) having openings ateach of a part of the second n⁻-type drain region 13 and an upper partof the p-type well 7 of the source region as an ion implantationinterrupting mask.

An n⁺-type drain region (high concentration drain region, or highconcentration n-type drain region) 14 is formed in a part of the secondn⁻-type drain region 13 by ion implantation. The n⁺-type drain region 14has an impurity concentration higher than that of the second n⁻-typedrain region 13. The n⁺-type drain region 14 is spaced apart from thechannel formation region as compared to the second n⁻-type drain region13. At this time, the n⁺-type drain region 14 having the highconcentration of impurities is formed more shallowly than the secondn⁻-type drain region 13 or first n⁻-type drain region 10 having a lowconcentration of impurities.

An n⁺-type source region 15 is formed in the p-type well 7 by ionimplantation. The n⁺-type source region 15 has an impurity concentrationhigher than that of the n⁻-type source region 11. The n⁺-type sourceregion 15 has a bottom deeper than the n⁻-type source region 11. Then⁺-type source region 15 is formed in a self-alignment manner with thesidewall spacer SW2 at the sidewall of the gate electrode G. Thus, then⁺-type source region 15 is spaced apart from the channel formationregion by a thickness of each of the sidewall spacers SW1 and SW2 alongthe gate length direction.

In this way, the low concentration n-type drain region (n-type LDDregion) intervening in between the gate electrode G and the n⁺-typedrain region 14 has a double-layered structure. The concentration ofimpurities of the first n⁻-type drain region 10 closest to the gateelectrode G is relatively low, and the concentration of impurities ofthe second n⁻-type drain region 13 spaced apart from the gate electrodeG is relatively high. The depletion layer is diffused between the gateelectrode G and the drain. This results in a decrease in feedbackcapacity (Cgd) generated between the gate electrode G and the firstn-type drain region 10 in the vicinity of the gate electrode G. The onresistance (Ron) also becomes small because of the high concentration ofimpurities of the second n⁻-type drain region 13. The second n⁻-typedrain region 13 is formed in the position apart from the gate electrodeG, which hardly affects the feedback capacity (Cgd). This arrangementcan decrease the on resistance (Ron) and the feedback capacity (Cgd),and thus can improve the efficiency of application of the power of theamplification circuit.

Until this step, the LDMOS is formed over the main surface (activeregion) of the epitaxial layer 2. The LDMOS includes the drain regioncomprised of the first n⁻-type drain region 10, the second n⁻-type drainregion 13, and the n⁺-type drain region 14, the source region comprisedof the n⁻-type drain region 11 and the n⁺-type source region 15, and thegate electrode G.

In the present application, the term “MOSFET” is used for convenience.The term “MOSFET” as used in the present application includes not only aMOSSFET using an oxide film (silicon oxide film) as a gate insulatingfilm, but also a MISFET (metal-insulator-semiconductor field effecttransistor) using an insulating film other than the oxide film (siliconoxide film) as a gate insulating film.

Then, p-type impurities, such as a boron fluoride (BF₂), areion-implanted into the surface of the substrate 1 near the p-typeembedded layer 3 using a photoresist film (not shown) having theopenings at the upper part of the p-type embedded layer 3 as an ionimplantation interrupting mask, so that p⁺-type semiconductor regions 16are formed above the p-type embedded layer 3. The p⁺-type semiconductorregions 16 are formed above the p-type embedded layers 3, which canreduce the resistance of the surface of the p-type embedded layer 3.

Until this step, the structure shown in FIG. 6 is obtained.

FIG. 7 shows a plan view of a main part corresponding to the stage ofthe step shown in FIG. 6. As shown in FIG. 7, the gate electrode G ofthe LDMOS extends in the direction Y. Although not shown in FIG. 7, thedrain region of the LDMOS (first n⁻-type drain region 10, second n⁻-typedrain region 13, and n⁺-type drain region 14) is formed in the activeregion between the adjacent gate electrodes G to extend in the directionY. The source region (n⁻-type source region 11 and n⁺-type source region15) of the LDMOS is formed in the active region on the side opposite tothe drain region of the gate electrode G to extend in the direction Y.Each p-type embedded layer 3 is formed between the n⁺-type sourceregions 15 (not shown in FIG. 7) of the adjacent LDMOSs. Although notshown in FIG. 7, the p⁺-type semiconductor region 16 is formed betweenthe n⁺-type source regions 15 of the adjacent LDMOSs to extend in thedirection Y.

In the LDMOS formation region (active region), the structure (layout) ofa unit cell (which is a repeating unit, a basic cell, a unit region, ora unit cell for the LDMOS) corresponding to the region UC shown in FIGS.6 and 7 is repeated in the direction X (see FIG. 16). One unit cell iscomprised of two LDMOS portions (that is, two gate electrodes G). Thatis, the unit cell is comprised of two LDMOS portions which are symmetricto each other in the direction X, sharing the n⁺-type drain region 14.Since the LDMOS is a MISFET element, one LDMOS portion can also beregarded as a MISFET element unit.

In this way, the unit cell is repeatedly arranged in the direction X.That is, the LDMOS portions are coupled together in parallel. Theparallel coupling is made by a gate wiring M1G, a source backsideelectrode SE, drain wirings (M1D, M2D, and M3D), plugs (P1D, P1G, P2D,and P3D), and the like as will be described later.

The following description will be given based on FIGS. 8 to 10. First, acompound layer containing a semiconductor and a metal is formed over thesurfaces (upper surfaces or upper parts) of the source region (n⁻-typesource region 11 and n⁺-type source region 15), the drain region (firstn⁻-type source region 10, second n⁻-type drain region 13, and n⁺-typedrain region 14), the p⁺-type semiconductor region 16, and the gateelectrode G. The metal silicide layer 17 is formed of, for example,cobalt silicide. The metal silicide layer 17 can be formed, for example,as follows. A cobalt (Co) film (not shown) is formed over the entiremain surface of the substrate 1 as a metal film, and then the substrate1 is subjected to the heat treatment, which causes the above metal filmto react with the source region (n⁻-type source region 11 and n⁺-typesource region 15), the drain region (first n⁻-type drain region 10,second n⁻-type drain region 13, and n⁺-type drain region 14), thep⁺-type semiconductor region 16, and a silicon (semiconductor film)forming the gate electrode G. Thus, the metal silicide layer 17 isformed over each of the source region (n⁻-type source region 11 andn⁺-type source region 15), the drain region (first n⁻-type drain region10, second n⁻-type drain region 13, and n⁺-type drain region 14), thep⁺-type semiconductor region 16, and the gate electrode G. The metalfilm can be formed, for example, by sputtering or the like. Then, anunreacted part of the metal film is removed. The metal silicide layer 17is not necessarily formed over all of the drain region (first n⁻-typedrain region 10, second n⁻-type drain region 13, and n⁺-type drainregion 14), the p⁺-type semiconductor region 16, and the gate electrodesG. For example, the above metal silicide layer 17 may not be formed overa part of the above regions. In this case, for example, a silicide oxidefilm or the like is formed over a region not to be solicited, which canprevent the above silicide reaction. The metal silicide layer 17 ispreferably formed over the source region (n⁻-type source region 11 andn⁺-type source region 15), and the p⁺-type semiconductor region 16. Sucha metal silicide layer 17 can achieve the reduction in resistance of thesource region. The connection resistance between the source region andthe source plug P1S to be described later can be reduced.

Then, an insulating film (interlayer insulating film) 21 is formed overthe substrate 1 by the CVD method or the like. The insulating film 21 isa laminated film comprised of a relatively thin silicon nitride film anda relatively thick silicon oxide film thereon. If necessary, the surfaceof the insulating film 21 is planarized using a chemical mechanicalpolishing (CMP) method or the like.

Then, contact holes (through holes) are formed in the insulating film 21by dry-etching the insulating film 21 using a photoresist film (notshown) in a predetermined shape as an etching mask, whereby a conductivefilm including a tungsten (W) film as a principal component is embeddedin each contact hole to thereby form plugs (contacts, contact portions,coupling portions, or conductors for coupling, namely, P1S, P1D, orP1G). For example, after forming a barrier film, such as a titaniumnitride film, over the insulating film 21 including the inside of eachcontact hole, a tungsten film is formed over the barrier film to fillthe contact holes. Unnecessary parts of the tungsten film and barrierfilm over the insulating film 21 are removed by the CMP method or theetching back method, whereby the plugs (P1S, P1D, and P1G) can beformed.

Until this step, the structure shown in FIG. 8 is obtained. FIG. 9 is aplan view of a main part corresponding to the stage of the step shown inFIG. 8. FIG. 10 corresponds to, for example, an enlarged view of aregion enclosed by a dashed-dotted line shown in FIG. 9 (note that thesame goes for FIGS. 13, and 18 to 27). As shown in FIGS. 9 and 10, theplug (P1) includes the source plug (source contact) P1S formed in thesource region, the drain plug (drain contact) P1D formed in the drainregion, and the gate plug (gate contact) P1G formed over the gateelectrode G.

The source plug P1S is formed in the source region comprised of then⁺-type source region 15 and the p⁺-type semiconductor region 16. Thedrain plug P1D is formed in the drain region comprised of the firstn⁻-type drain region 10, the second n⁻-type drain region 13, and then⁺-type drain region 14. The gate plug P1G is formed over the gateelectrode G.

The drain plug P1D is linearly formed to extend in the direction Y,corresponding to the drain region extending in the direction Y.

In contrast, the source plug P1S is disposed and separated into aplurality of parts over the source region extending in the direction Y.As shown in FIG. 9, the source plug P1S is comprised of three columns ofseparated source plugs P1S, and the column of the separated source plugP1S extends in the direction Y. The separated source plugs P1S, each ofwhich is a square pole having a substantially square pattern shape(shape in a planar view from the upper surface), are disposed atpredetermined intervals in the directions X and Y. For example, thepattern shape (shape in the planar view from the upper surface) of eachof the separated source plugs P1S is a square having each side of 0.35μm in length. The separated source plugs P1S are disposed at about 0.45μm intervals (first interval) in the directions X and Y. The patternshape (shape in the planar view from the upper surface) of eachseparated source plug P1S is not limited thereto. The source plugs P1Sare disposed at different intervals between the directions X and Y. Forexample, one side of the pattern shape of the separated source plug P1Sis about 0.2 to 1 μm, and the interval in the direction X and in thedirection Y can be set to about 0.2 to 1 μm.

In this embodiment, the source plug P1S is comprised of the separatedsource plugs P1, which can reduce the parasitic capacitance as will bedescribed in detail later.

The gate plug P1G is disposed on the end of the gate electrode Gextending in the direction Y as shown in FIG. 9, and not shown in thecross-sectional view of FIG. 8.

Next, the following steps will be described below based on FIGS. 11 to13. As shown in FIG. 11, a wiring (first layer wiring) M1 is formed overthe insulating film 21 with the plugs (P1S, P1D, and P1G) embeddedtherein. The wiring M1 can be formed by forming a conductive film overthe insulating film 21 with the plugs (P1S, P1D, and P1G) embeddedtherein, and patterning the conductive film by the photolithography anddry-etching. The wiring M1 can be a tungsten wiring including a tungsten(W) film as a principal component, or an aluminum wiring including analuminum (Al) film as a principal component.

Until this step, the structure shown in FIG. 11 is obtained. FIG. 12shows a plan view of a main part corresponding to the stage of the stepshown in FIG. 11. FIG. 13 is a partial enlarged view of FIG. 12. Asshown in FIGS. 12 and 13, the wiring M1 includes a source wiring (wiringfor the source) M1S, a drain wiring (wiring for the drain) M1D, and agate wiring (wiring for the gate) M1G. The source wiring (wiring for thesource) M1S is electrically coupled to both the n⁺-type source region 15and the p⁺-type semiconductor region 16 via the source plug P1S. Thedrain wiring M1D is electrically coupled to the n⁺-type drain region 14via the drain plug P1D. The gate wiring (wiring for the gate) M1G iselectrically coupled to the gate electrode G via the gate plug P1G asshown in FIG. 12, and not shown in the cross-sectional view of FIG. 11.

As shown in FIGS. 12 and 13, the drain wiring M1D extends in thedirection Y in a gap between the adjacent gate electrodes G in the drainregion (first n⁻-type drain region 10, second n⁻-type drain region 13,and n⁺-type drain region 14). The source wiring M1S extends in thedirection Y in another gap between the adjacent gate electrodes G in thesource region (n⁻-type source region 11 and n⁺-type source region 15).The gate wiring M1G extends over the end of the gate electrode G in thedirection X.

Then, as shown in FIG. 14, an insulating film (interlayer insulatingfilm) 24 comprised of a silicon oxide film is formed over the insulatingfilm 21 by the CVD method or the like so as to cover the wiring M1.

Then, contact holes (through holes) are formed so as to expose a part ofthe drain wiring M1D to the insulating film 24 by dry-etching theinsulating film 24 using a photoresist film (not shown) in apredetermined shape as an etching mask. A conductive film containing atungsten (W) film as a principal component is embedded in each contacthole to thereby form a drain plug (conductor for coupling) P2D. Thedrain plug P2D can be formed substantially in the same way as the aboveplug P1. The drain plug P2D is positioned above at least drain wiringM1D. The drain plug P2D is formed in the same pattern shape and layoutas those of the drain plug P1D. In this way, the drain plug P2D has itsbottom brought into contact with and electrically coupled to the drainwiring M1D.

Then, a drain wiring (second layer wiring) M2D is formed over theinsulating film 24 with the drain plugs P2D embedded therein. The drainwiring M2D can be formed by forming a conductive film including analuminum (Al) alloy film as a principal component, over the insulatingfilm 24 with the drain plugs P2D embedded therein, and patterning theconductive film using photolithography and dry-etching. The patternshape of the drain wiring M2D is substantially the same as that of thedrain wiring M1D (see FIG. 12). That is, the drain wiring M2D is formedin the substantially same pattern shape as that of the drain wiring M1D.The conductive film for forming the drain wiring M2D can use a laminatedfilm formed by laminating a barrier conductive film (for example, alaminated film of a titanium film and a titanium nitride film), analuminum film (or an aluminum alloy film), and a barrier conductive film(for example, a laminated film of a titanium film and a titanium nitridefilm) in that order from the bottom. In the laminated film, the barrierconductive film under and above the aluminum film as the main conductivefilm is thinner than the aluminum film.

Then, an insulating film (interlayer insulating film) 27, such as asilicon oxide film, is formed over the insulating film 24 by the CVDmethod or the like so as to cover the drain wiring M2D.

Then, contact holes (through holes) are formed so as to expose a part ofthe drain wiring M2D to the insulating film 24 by dry-etching theinsulating film 27 using a photoresist film (not shown) in apredetermined shape as an etching mask. A conductive film containing atungsten (W) film or an aluminum film as a principal component isembedded in each contact hole (through hole) to thereby form a drainplug (conductor for coupling) P3D. The drain plug P3D can be formedsubstantially in the same way as the above plug P1. The drain plug P2Dis positioned above at least drain wiring M2D. The drain plug P3D isformed in the same pattern shape and layout as those of the drain plugP2D(P1D). In this way, the drain plug P3D has its bottom brought intocontact with and electrically coupled to the drain wiring M2D.

Then, a drain wiring (third layer wiring) M3D is formed over aninsulating film 27 with the drain plug P3D embedded therein. The drainwiring M3D can be formed by forming a conductive film containing analuminum (Al) alloy film as a principal component, over the insulatingfilm 27 with the drain plug P3D embedded, and patterning the conductivefilm by photolithography or dry etching, so that the drain wiring M3Dcomprised of the patterned conductive film can be formed. The conductivefilm for forming the drain wiring M3D can be formed using a laminationof a barrier conductive film (for example, a lamination of a titaniumfilm and a titanium nitride film), an aluminum film (or aluminum alloyfilm), and a barrier conductive film (for example, a lamination of atitanium film and a titanium nitride film) which are laminated in thatorder from the bottom. Each of the barrier conductive films positionedabove and below the aluminum film is thin as compared to the aluminumfilm as the main conductive film. Thus, the drain wiring M3D is formedof aluminum (Al) as a principal component.

The drain region extending in the direction Y and the drain plug P1D arecoupled to each other in the direction X by the drain wiring M3D (seeFIG. 15). That is, the drain wiring M3D has linear first parts extendingin the direction Y like the drain wirings M1D and M2D, and a second partextending in the direction X. The first parts are coupled together bythe second part in the direction X. The width of the first part in thedirection X is larger than the width of each of the drain wirings M1Dand M2D (see FIGS. 14 and 15). However, for convenience, in FIG. 3 whichis a plan view described above, these widths are shown to be the same.

The structure (layout) of a unit cell (repeating unit, basic cell, aunit region, or a unit cell for the LDMOS) is repeated in the directionX as shown in FIG. 15. As shown in FIG. 16, the LDMOS has a repeatingstructure. That is, the source wiring M1S extending in the direction Yand the drain wiring M1D extending in the direction Y (M2D and drainwiring M3D) are alternately disposed in the direction X. The gateelectrode G is positioned between the source wiring M1S extending in thedirection Y and the drain wiring M1D extending in the direction Y (seeFIG. 15 or the like).

Subsequently, a laminated film of a silicon nitride film and a siliconoxide film is deposited as a protective film 29 over the drain wiringM3D by the CVD method or the like. Then, an opening (drain pad region(not shown)) is formed at the drain wiring M3D by etching a part of theprotective film using a photoresist film having a predetermined shape asa mask. Another opening (gate pad region) is formed over a third layerwiring (not shown) electrically coupled to the gate wiring M1G.

Then, the backside of the substrate 1 is polished by a thickness ofabout 280 nm, and subsequently a source backside electrode (sourceelectrode) SE is formed at the backside of the substrate 1. The sourcebackside electrode SE can be formed by depositing aNi(nickel)-Cu(copper) alloy film in a thickness of about 600 nm bysputtering.

Thereafter, the substrate 1 is cut along separation regions (not shown)into a plurality of chips. Then, for example, the backside of the chipon the source backside electrode SE side is coupled to a couplingportion of a wiring board via a solder or the like. The semiconductordevice of the first embodiment is manufactured by coupling an externalconnection terminal of the wiring board to the above drain pad region orgate pad region via a wire (gold wire) or the like.

[Example of Application to Electronic Device]

Devices to which the semiconductor device (chip) of this embodiment isapplied are not limited. However, the semiconductor device (chip) ofthis embodiment can be applied, for example, to a power amplificationmodule (semiconductor device, electronic device, power amplifier, highpower amplifier, high-frequency power amplifier, high-frequency poweramplifying device, power amplifier module, or RF power module) used in amobile communication device, such as a digital cellular phone (DPS).

FIG. 17 is a plan view exemplarily showing an example of the structureof the power amplifier module (chip). A chip includes LDMOS formationregions LD, a capacity formation region C, resistance formation regionsR, and the like. The reference character BP indicates a pad region.These elements form the power amplification circuit. As shown in FIG.17, two LDMOS formation regions LD are provided so as to respond to twofrequency bands. In the relatively larger LDMOS formation region, eachLDMOS is disposed.

Then, in the LDMOSs repeatedly disposed in the relatively large region(see FIG. 16), a parasitic capacitance tends to be generated. However,the use of the structure of this embodiment can largely reduce theparasitic capacitance.

The effects of this embodiment will be described below.

According to this embodiment, the number of wiring layers forming thesource wiring is smaller than that of wiring layers forming the drainwiring, which can reduce the parasitic capacitance between the drainwiring and the source wiring.

The separation of the source plug P1S decreases the opposed area betweenthe source plug P1S and the drain plug P1D, and can further reduce theparasitic capacitance therebetween. The separation of the source plugP1S can also reduce the parasitic capacitance between the source plugP1S and the drain wiring M1D.

That is, in the case of FIG. 27 as a comparative example in which thesource plug P1S is extended in the direction Y without being separated,the opposed area between the source plug P1S and the drain plug P1D, andthe opposed area between the source plug P1S and the drain wiring 141Dbecome larger, which results in an increase in parasitic capacitancetherebetween. In particular, the LDMOSs are repeatedly disposed in therelatively large region, which largely affects the parasiticcapacitance.

In contrast, the semiconductor device of this embodiment can achieve thelarge reduction in parasitic capacitance by the above relatively simplestructure. The manufacturing process of the semiconductor device in thisembodiment can form the semiconductor device with good characteristicswithout increasing the number of masks (original plates) and the numberof manufacturing steps, as compared to the above manufacturing processin the comparative example. The problem of the parasitic capacitancebecomes remarkable with miniaturization of elements. However, thesemiconductor device of this embodiment can easily miniaturize theelements to achieve the reduction in size, while keeping or improvingthe characteristics.

In this way, by decreasing the parasitic capacitance, this embodimentcan prevents the reduction in power efficiency of an amplificationelement due to an increase in power, for example, in the above poweramplification circuit and the like. In other words, the power efficiencygiven by the amplification element can be improved. Thus, thecharacteristics of the semiconductor device can be improved.

Second Embodiment

Although in the first embodiment, the drain plug P1D is linearlydisposed to extend in the direction Y and only the source plug P1S isdivided into the separated source plugs, a drain plug P1D may also beseparated.

FIG. 18 shows a plan view of the structure of the semiconductor deviceof this embodiment. The structure of this embodiment differs from thestructure (see FIGS. 1 to 3) of the first embodiment only in the shapeof the drain plug P1D. Now, only the structure of the drain plug P1Dwill be described below in detail, but the description of the structureof other parts will be omitted below.

Description of Structure

The semiconductor device of this embodiment has also the LDMOS with thesame structure as that of the first embodiment. That is, the LDMOSincludes the drain region comprised of the first n⁻-type drain region10, the second n⁻-type drain region 13, and the n⁺-type drain region 14;the source region comprised of the n⁻-type source region 11 and then⁺-type source region 15; and the gate electrode G formed between thesource and drain regions (in a channel formation region) via the gateinsulating film 8 (see FIGS. 1 and 2, and the like).

The gate electrode G extends in the direction Y as shown in FIG. 18. Thesource region is disposed to extend in the direction Y in the regionpositioned on one side of the gate electrode G (on the left side of thegate electrode G in FIG. 18). The drain region is disposed to extend inthe direction Y in the region positioned on the other side of the gateelectrode G (on the right side of the gate electrode G in FIG. 18).

Although not shown in FIG. 18, a metal silicide layer 17 is formed overthe drain region, the source region, and the gate electrode G formingthe above LDMOS (see FIGS. 1 and 2, and the like). The source region iselectrically coupled to the source plug P1S via the metal silicide layer17. The drain region is electrically coupled to the drain plug P1D viathe metal silicide layer 17. Although not shown in FIG. 18, the gateelectrode G is electrically coupled to the gate plug P1G via the metalsilicide layer 17 (see FIG. 9).

The drain plug P1D is formed in the region positioned on one side of thegate electrode G (on the right side of the gate electrode G as shown inFIG. 18). The source plug P1S is formed in the region positioned on theother side of the gate electrode G (on the left side of the gateelectrode G as shown in FIG. 18).

As shown in FIG. 18, in this embodiment, the drain plug P1D is comprisedof a plurality of separated drain plugs P1D. That is, the separateddrain plugs P1D each having a square pole shape are disposed atpredetermined intervals (first intervals) in the direction Y. In otherwords, the separated drain plugs P1D disposed in the direction Y have arectangular pattern shape (shape in the planar view from the uppersurface), and are disposed at the predetermined intervals in thedirection Y.

The source plug P1S is comprised of a plurality of separated sourceplugs P1S, like the first embodiment. That is, the separated sourceplugs P1S each having a square pole shape are arranged in an array inthe directions X and Y. In other words, the separated source plugs P1Sdisposed in the direction Y have a rectangular pattern shape (shape inthe planar view from the upper surface), and disposed at predeterminedintervals. The separated source plugs P1S disposed in the direction Yare hereinafter referred to as a separated source plug column. As shownin FIG. 18, three columns of separated source plugs are disposed in theregion on the left side of the gate electrode G at predeterminedintervals in the direction X. In the present specification, the term“source plug” and the term “separated source plug” are designated by thesame reference character “P1S”, and the term “drain plug” and the term“separated drain plug” are designated by the same reference character“P1D”. Unless otherwise specified, the term “source plug” means all ofthe separated source plugs P1S, and the term “drain plug” means all ofthe separated drain plugs P1D.

In this embodiment, one separated drain plug P1D is shifted in thedirection Y to be positioned between two adjacent separated source plugsP1S in the direction Y. In other words, each of the separated drainplugs P1D arranged in parallel in the direction Y, and each of theseparated source plugs P1S arranged in parallel in the direction Y arealternatively arranged in the direction Y. In other words, the separateddrain plugs P1D and the separated source plugs P1S are arranged in ahoundstooth manner.

A drain wiring M1D is disposed over the drain plugs P1D. A source wiringM1S is disposed over the source plugs P1S. Although not shown in FIG.18, a gate wiring M1G is disposed over the gate plugs P1G (see FIG. 9).As shown in FIG. 18, the drain wiring M1D is linearly disposed to extendin the direction Y so as to cover the separated drain plugs P1D. Thesource wiring MIS is linearly disposed to extend in the direction Y soas to cover the separated source plugs P1S. The drain wiring M1D, thesource wiring M1S, and the gate wiring M1G belong to a first layerwiring.

Like the first embodiment, although the drain plugs (P2D, P3D) and thedrain wirings (M2D, MD3) are disposed over the drain wiring M1D, theillustration of the plugs and wirings is omitted.

In this way, in this embodiment, not only the source plug P1S, but alsothe drain plug P1D is separated, so that the opposed area between thesource plug P1S and the drain plug P1D can be decreased.

Additionally, the separated drain plug P1D is shifted from the separatedsource plug P1S, whereby the opposed area therebetween can be furtherdecreased.

The manufacturing method of the semiconductor device of this embodimentdiffers from the first embodiment only in the shape of the pattern inthe formation step of the drain plugs P1D, and thus a description of themanufacturing method will be omitted below.

FIG. 19 shows a plan view of a main part of the structure of otherregions in this embodiment. Referring to FIG. 19, the separated sourceplugs P1S are arranged in a 2×3 array in the region positioned on oneside of the gate electrode G (on the left side of the gate electrode Gin FIG. 19), and three separated drain plugs P1D are arranged in thedirection Y in the region positioned on the other side of the gateelectrode G (on the right side of the gate electrode G as shown in FIG.19). FIG. 19 illustrates a region different from the region shown inFIG. 18. Like FIG. 18, one separated drain plug P1D is shifted in thedirection Y to be positioned between two adjacent separated plugs P1S inthe direction Y.

Third Embodiment

Although in the first embodiment, the drain plug P1D is linearlydisposed in the direction Y and only the source plug P1S is divided intoseparated plugs, the drain plug P1D may be separated. Although in thefirst embodiment, the drain wiring M1D is linearly disposed to extend inthe direction Y, the drain wiring M1D may also be separated.

FIG. 20 is a plan view showing the structure of the semiconductor deviceof this embodiment. The structure of this embodiment differs from thatof the first embodiment (see FIGS. 1 to 3) only in the shape of thedrain plug P1D and the shape of the drain wiring M1D. Now, only thestructure of the drain plug P1D and the drain wiring M1D will bedescribed in detail, and thus a description of the structure of othercomponents will be omitted below.

Description of Structure

Also, the semiconductor device of this embodiment includes a LDMOShaving the same structure as that of the first embodiment. That is, theLDMOS includes the drain region comprised of the first n⁻-type drainregion 10, the second n⁻-type region 13, and the n⁺-type drain region14; the source region comprised of the n⁻-type source region 11 and then⁺-source region 15; and the gate electrode G formed between the sourceand drain regions (in a channel formation region) via the gateinsulating film 8 (see FIGS. 1 and 2 and the like).

The gate electrode G extends in the direction Y as shown in FIG. 20. Thesource region is disposed to extend in the direction Y in the regionpositioned on one side of the gate electrode G (on the left side of thegate electrode G as shown in FIG. 20). The drain region is disposed toextend in the direction Y in the region positioned on the other side ofthe gate electrode G (on the right side of the gate electrode G as shownin FIG. 20).

Although not shown in FIG. 20, the metal silicide layer 17 is formedover the drain region, the source region, and the gate electrode Gforming the above LDMOS (see FIGS. 1 and 2, and the like). The sourceregion is electrically coupled to the source plugs P1S via the metalsilicide layer 17. The drain region is electrically coupled to the drainplug P1D via the metal silicide layer 17. Although not shown in FIG. 20,the gate electrode G is electrically coupled to the gate plug P1G viathe metal silicide layer 17 (see FIG. 9).

The drain plugs P1D are formed in the region positioned on one side ofthe gate electrode G (on the right side of the gate electrode G in FIG.20), and the source plugs P1S are formed in the region positioned on theother side of the gate electrode G (on the left side of the gateelectrode G in FIG. 20).

As shown in FIG. 20, in this embodiment, the drain plug P1D is comprisedof separated drain plugs P1D. That is, the separated drain plugs P1Deach having a square pole shape are arranged at predetermined intervalsin the direction Y. In other words, the separated drain plugs P1Ddisposed in the direction Y have a rectangular pattern shape (shape inthe planar view from the upper surface), and are disposed at thepredetermined intervals in the direction Y.

The source plug P1S is comprised of a plurality of separated sourceplugs P1S, like the first embodiment. That is, the separated sourceplugs P1S each having a square pole are arranged in an array in thedirections X and Y. In other words, the separated source plugs P1Sdisposed in the direction Y have a rectangular pattern shape (shape inthe planar view from the upper surface), and are disposed at thepredetermined intervals. The separated source plugs P1S disposed in thedirection Y are hereinafter referred to as a “separated source plugcolumn”. As shown in FIG. 20, three columns of separated source plugsare disposed at predetermined intervals in the direction X in the regionon the left side of the gate electrode G.

In this embodiment, the position of one separated drain plug P1D in thedirection Y corresponds to the position of the separated source plug P1Sin the direction Y. In other words, the separated drain plugs P1D andthe separated source plugs P1S are arranged in parallel in the directionY.

The drain wirings MID are disposed over the drain plugs P1D. The sourcewiring M1S is disposed over the source plugs P1S. Although not shown inFIG. 20, the gate wiring M1G is disposed over the gate plugs P1G (seeFIG. 9). As shown in FIG. 20, the drain wiring M1D is divided intoseparated drain wirings such that the separated drain wiring is disposedover each separated drain plug P1D among the separated drain plugs P1D.In other words, the drain wiring M1D has a plurality of separated drainwirings M1D disposed at predetermined intervals (second intervals) inthe direction Y. In the present specification, the term “drain wiring”and the term “separated drain wiring” are designated by the samereference character “M1D”. Unless otherwise specified, the term “drainwiring” means all of the separated drain wirings M1D.

Like the first embodiment, the drain wiring (M2D) is disposed over thedrain wiring M1D via the drain plug P2D, and the drain wiring (M3D) isdisposed thereover via the drain plug P3D. The illustration thereof willbe omitted below. The above drain plug P2D is preferably disposed so asto be located over at least each separated drain wiring M1D. Forexample, the separated drain plugs P2D having the same pattern shape andlayout as those of the separated drain plugs P1D shown in FIG. 20 areformed. The drain wiring (M2D) over the separated drain plug P2D may belinear. In this case, the drain plug (P3D) and the drain wiring (M3D)can also be linear. It is apparent that the drain wiring (M2D), thedrain plug (P3D), and the drain wiring (M3D) may be separated.

In this way, in this embodiment, not only the source plug P1S, but alsothe drain plug P1D is separated, which can reduce the opposed areabetween the source plug P1S and the drain plug P1D.

Additionally, by separating the drain wiring M1D, the opposed areabetween the source plug P1S and the drain wiring M1D can be decreased.

The manufacturing method of the semiconductor device of this embodimentdiffers from the first embodiment in the shape of each pattern in theformation steps of the drain plugs P1D and the drain wirings M1D, andthus a description of the manufacturing method of this embodiment willbe omitted below.

Although in this embodiment, the drain wiring 141D is separated suchthat the separated drain plug P1D corresponds to the separated wiringM1D one by one, for example, the drain wiring M1D may be separated tostep over the separated drain plugs P1D adjacent thereto in thedirection Y. Thus, the drain wiring MID may be separated every separateddrain plug P1D.

Fourth Embodiment

Although in the first embodiment, the source wiring M1S is linearlyformed to extend in the direction Y, that is, the pattern shape of thesource wiring M1S has a rectangular shape having its long side in thedirection Y, the source wiring M1S may be provided with a cutoutportion. Like the above third embodiment, <1> the drain plug P1D may beseparated, and <2> the drain wiring M1D may be separated.

FIG. 21 is a plan view showing the structure of the semiconductor devicein this embodiment. The structure of this embodiment differs from thestructure of the first embodiment (FIGS. 1 to 3) only in the shapes ofthe drain plug P1D, the drain wiring MID, and the source wiring M1S.Thus, only these components will be described in detail below, and thedescription of the structures of other parts will be omitted below.

Description of Structure

The semiconductor device of this embodiment also includes a LDMOS havingthe same structure as that of the first embodiment. That is, the LDMOSincludes the drain region comprised of the first n⁻-type drain region10, the second n⁻-type drain region 13, and the n⁺-type drain region 14;the source region comprised of the n⁻-type source region 11 and ann⁺-source region 15; and the gate electrode G formed between the sourceand drain regions (in a channel formation region) via the gateinsulating film 8 (see FIGS. 1 and 2 and the like).

The gate electrode G extends in the direction Y as shown in FIG. 21. Thegate electrode G is disposed such that the source region extends in thedirection Y in the region positioned on one side of the gate electrode G(on the left side of the gate electrode G in FIG. 21). Further, the gateelectrode G is disposed such that the drain region extends in thedirection Y in the region positioned on the other side of the gateelectrode G (on the right side of the gate electrode G in FIG. 21).

Although not shown in FIG. 21, the metal silicide layer 17 is formedover the drain region, source region, and gate electrode G forming theabove LDMOS (see FIGS. 1 and 2, and the like). The source region iselectrically coupled to source plugs P1S via the metal silicide layer17. The drain region is electrically coupled to the drain plug P1D viathe metal silicide layer 17. Although not shown in FIG. 21, the gateelectrode G is electrically coupled to the gate plug P1G via the metalsilicide layer 17 (see FIG. 9).

The drain plugs P1D are formed in the region positioned on one side ofthe gate electrode G (on the right side of the gate electrode G as shownin FIG. 21), and the source plugs P1S are formed in the regionpositioned on the other side of the gate electrode G (on the left sideof the gate electrode G as shown in FIG. 21).

As shown in FIG. 21, in this embodiment, the drain plug P1D is comprisedof a plurality of separated drain plugs P1D. That is, the separateddrain plugs P1D each having a square pole are disposed at firstintervals in the direction Y. In other words, the separated drain plugsP1D disposed in the direction Y have a rectangular pattern shape (shapein the planar view from the upper surface), and are disposed at thepredetermined intervals in the direction Y.

Like the first embodiment, the source plug P1S is comprised of separatedsource plugs P1S. That is, the separated drain plugs P1S each having asquare pole shape are arranged in the array in the directions X and Y.In other words, the separated source plugs P1S disposed in the directionY have a rectangular pattern shape (shape in the planar view from theupper surface), and are disposed at the predetermined intervals. Theseparated source plugs P1S disposed in the direction Y are hereinafterreferred to as “separated source plug column”. As shown in FIG. 3, threecolumns of the separated source plugs are disposed at predeterminedintervals in the direction X in the region on the left side of the gateelectrode G.

In this embodiment, the position of one separated drain plug P1D in thedirection Y corresponds to the position of the separated source plug P1Sin the direction Y. In other words, the separated drain plug P1D and theseparated source plug P1S are disposed in parallel in the direction Y.

The drain wiring M1D is disposed over each drain plug P1D. The sourcewiring M1S is disposed over the source plugs P1S. Although not shown inFIG. 21, the gate wiring M1G is disposed over the gate plug P1G (seeFIG. 9). As shown in FIG. 21, the drain wiring MID is divided intoseparated drain wirings such that each separated drain wiring isdisposed over one corresponding separated drain plug P1D among theseparated drain plugs P1D. In other words, the drain wiring M1D has aplurality of separated drain wirings M1D disposed at predeterminedintervals (second intervals) in the direction Y.

Cutout portions are provided in the source wiring M1S. That is, as shownin FIG. 21, the source wiring M1S extends in the direction Y as a whole,and parts of the end of the wiring M1S positioned on the drain plug P1Dside among the ends extending in the direction Y recede in the directionX. The receding part is hereinafter referred to as the cutout portion.The cutout portion is provided to be located between the adjacentseparated source plugs P1S in the direction Y. As mentioned above, theseparated drain plugs P1D and the separated source plugs P1S arearranged in parallel in the direction Y. The cutout portion is providedin the corresponding position between the adjacent separated drain plugsP1D in the direction Y.

Like the first embodiment, the drain wiring (M2D) is disposed over thedrain wiring M1D via the drain plug P2D, and further the drain wiring(M3D) is disposed thereover via the drain plug P3D, but the illustrationthereof will be omitted below. The drain plug P2D is preferablypositioned above at least each separated drain wiring M1D. For example,the drain plug P2D is formed in the same pattern shape and layout asthose of the separated drain plug P1D shown in FIG. 21. The drain wiring(M2D) over the separated drain plug P2D may be linear. In this case, thedrain plug (P3D) and the drain wiring (M3D) can also be linear. It isapparent that the drain wiring (M2D), the drain plug (P3D), and thedrain wiring (M3D) may be separated.

In this way, in this embodiment, not only the source plug P1S, but alsothe drain plug P1D is separated, so that the opposed area between thesource plug P1S and the drain plug P1D can be decreased. Additionally,the separation of the drain wiring M1D can decrease the opposed areabetween the source plug P1S and the drain wiring M1D.

Additionally, since the cutout portions are provided in the sourcewiring M1S, the distance between the source wiring M1S and the separateddrain plug P1D at the cutout portion becomes large, which can reduce theparasitic capacitance. Further, at the cutout portion, the distancebetween the source wiring M1S and the separated drain wiring M1D alsobecomes large, which can reduce the parasitic capacitance.

The manufacturing method of the semiconductor device of this embodimentdiffers from the first embodiment only in the shape of the pattern andlayout in the formation steps of the drain plug P1D, the drain wiringMID, and the source wiring M1S, and thus a description thereof will beomitted below.

Although in this embodiment, the drain wiring M1D is separated such thatthe separated drain plug P1D corresponds to the separated wiring M1D oneby one, for example, the drain wiring M1D may be separated to step overthe separated drain plugs P1D adjacent thereto in the direction Y. Asmentioned above, the drain wiring M1D may be separated for eachseparated drain plug P1D.

Fifth Embodiment

In the first embodiment, the drain plug P1D is linearly disposed toextend in the direction Y, and only the source plug P1S is separated.However, in this embodiment, <1> the drain plug P1D may be divided intothe separated drain plugs, which may be shifted from the separatedsource plugs P1S in the direction Y, like the second embodiment, and <2>the drain wiring M1D may be separated and <3> the source wiring MIS maybe provided with the cutout portions, like the fourth embodiment.

FIG. 22 is a plan view showing the structure of the semiconductor deviceof this embodiment. This embodiment differs from the structure of thefirst embodiment (see FIGS. 1 to 3) only in the shapes of the drain plugP1D, the drain wiring M1D, and the source wiring M1S. Now, the structureof these elements will be described below in detail, and the descriptionof the structure of other parts will be omitted below.

Description of Structure

The semiconductor device of this embodiment also includes a LDMOS havingthe same structure as that of the first embodiment. That is, the DLMOSincludes the drain region comprised of the first n⁻-type drain region10, the second n⁻-type drain region 13, and the n⁺-type drain region 14;the source region comprised of the n⁻-type source region 11 and then⁺-type source region 15; and the gate electrode G formed between thesource and drain regions (in a channel formation region) via the gateinsulating film 8 (see FIGS. 1 and 2, and the like).

The gate electrode G extends in the direction Y as shown in FIG. 22. Thegate electrode G is disposed such that the source region extends in thedirection Y in the region positioned on one side of the gate electrode G(on the left side of the gate electrode G in FIG. 22). Further, the gateelectrode G is disposed such that the drain region extends in thedirection Y in the region positioned on the other side of the gateelectrode G (on the right side of the gate electrode G in FIG. 22).

Although not shown in FIG. 22, the metal silicide layer 17 is formedover the drain region, the source region, and the gate electrode Gforming the above LDMOS (see FIGS. 1 and 2, and the like). The sourceregion is electrically coupled to the source plug P1S via the metalsilicide layer 17. The drain region is electrically coupled to the drainplug P1D via the metal silicide layer 17. Although not shown in FIG. 22,the gate electrode G is electrically coupled to the gate plug P1G viathe metal silicide layer 17 (see FIG. 9).

The drain plug P1D is formed in the region positioned on one side of thegate electrode G (on the right side of the gate electrode G in FIG. 22).The source plug P1S is formed in the region positioned on the other sideof the gate electrode G (on the left side of the gate electrode G inFIG. 22).

As shown in FIG. 22, in this embodiment, the drain plug P1D is comprisedof a plurality of separated plugs P1D. That is, the separated drainplugs P1D each having a square pole shape are disposed at firstintervals in the direction Y. In other words, the form of the patternshape (shape in the planar view from an upper surface) of the separateddrain plugs P1D disposed in the direction Y is rectangular. Theseparated drain plugs P1D are disposed at predetermined intervals in thedirection Y.

Like the first embodiment, the source plug P1S is comprised of separatedsource plugs P1S. That is, the separated source plugs P1S each having athe square pole shape are arranged in the array in the directions X andY. In other words, the pattern shape (shape in the planar view from anupper surface) of the separated source plugs P1S disposed in thedirection Y is rectangular. The separated source plugs P1S are disposedat predetermined intervals. The separated source plugs P1S disposed inthe direction Y is hereinafter referred to as a “separated source plugcolumn”. As shown in FIG. 22, three columns of separated source plugsare disposed in the direction X at predetermined intervals in the regionon the left side of the gate electrode G.

In this embodiment, one separated drain plug P1D is shifted in thedirection Y to be positioned between two adjacent separated plugs P1S inthe direction Y. In other words, each of the separated drain plugs P1Darranged in parallel in the direction Y, and each of the separatedsource plugs P1S arranged in parallel in the direction Y arealternatively arranged in the direction Y. In other words, the separateddrain plugs P1D and the separated source plugs P1S are arranged in ahoundstooth manner.

The drain wiring M1D is disposed over the drain plug P1D. The sourcewiring M1S is disposed over the source plugs P1S. Although not shown inFIG. 22, the gate wiring M1G is disposed over the gate plug P1G (seeFIG. 9). As shown in FIG. 22, the drain wiring M1D is divided intoseparated drain wirings such that each separated drain wiring isdisposed over the corresponding separated drain plug P1D among theseparated drain plugs P1D. In other words, the drain wiring M1D has aplurality of separated drain wirings M1D disposed at predeterminedintervals (second intervals) in the direction Y.

Cutout portions are provided in the source wiring MIS. That is, as shownin FIG. 22, the source wiring M1S extends in the direction Y as a whole,and parts of the end of the wiring M1S positioned on the drain plug P1Dside among the ends extending in the direction Y recede in the directionX. The receding part is hereinafter referred to as a “cutout portions”.The cutout portion is provided to be located between the adjacentseparated source plugs P1S in the direction Y. As mentioned above, theseparated drain plugs P1D are shifted from the separated source plugsP1S in the direction Y. The cutout portion is provided in the positioncorresponding to the separated drain plug P1D in the direction Y.

Like the first embodiment, the drain wiring (M2D) is disposed over thedrain wiring M1D via the drain plug P2D, and the drain wiring (M3D) isdisposed thereover via the drain plug P3D. The illustration thereof willbe omitted below. The above drain plug P2D is preferably disposed so asto be located over at least each separated drain wiring M1D. Forexample, the drain plug P2D is formed in the same pattern shape andlayout as those of the drain plug P1D shown in FIG. 22. The drain wiring(M2D) over the separated drain plug P2D may be linear. In this case, thedrain plug (P3D) and the drain wiring (M3D) can also be linear. It isapparent that the drain wiring (M2D), the drain plug (P3D), and thedrain wiring (M3D) may be separated.

In this embodiment, not only the source plug P1S, but also the drainplug P1D is separated, so that the opposed area between the source plugP1S and the drain plug P1D can be decreased. The separation of the drainwiring M1D can decrease the opposed area between the source plug P1S andthe drain wiring M1D.

Additionally, since the cutout portions are provided in the positionscorresponding to the separated drain plugs P1D at the source wiring M1Sin the direction Y, the distance between the source wiring M1S and theseparated drain plug P1D at each cutout portion becomes large, which canreduce the parasitic capacitance. Further, at the cutout portion, thedistance between the source wiring M1S and the separated drain wiringM1D also becomes large, which can reduce the parasitic capacitance.

The manufacturing method of the semiconductor device of this embodimentdiffers from the first embodiment only in the shape of the pattern andlayout in the formation steps of the drain plug P1D, the drain wiringM1D, and the source wiring M1S, and thus a description thereof will beomitted below.

Although in this embodiment, the drain wiring M1D is separated such thatthe separated drain plug P1D corresponds to the separated wiring M1D oneby one, for example, the drain wiring M1D may be separated to step overthe separated drain plugs P1D adjacent thereto in the direction Yl. Asmentioned above, the drain wiring M1D may be separated for eachseparated drain plug P1D.

Sixth Embodiment

Although in the first embodiment three columns of separate source plugsare provided, the separated source plugs arranged in parallel in thedirection X (three separated source plugs in the direction X as shown inFIG. 3) are coupled together into a square pole having a long side inthe direction X. Like the fifth embodiment, <1> the drain plug P1D maybe divided into the separated drain plugs, which may be shifted from theseparated source plugs P1S in the direction Y, and <2> the drain wiringM1D may be separated and <3> the source wiring MIS may be provided withthe cutout portions.

FIG. 23 shows a plan view of the structure of the semiconductor devicein this embodiment. The structure of this embodiment differs from thatof the first embodiment (see FIGS. 1 to 3) in the shapes of the sourceplug P1S, the drain plug P1D, the drain wiring MID, and the sourcewiring M1S. Now, the structure of these elements will be described belowin detail, and the description of the structure of other parts will beomitted below.

Description of Structure

The semiconductor device of this embodiment has also the LDMOS with thesame structure as that of the first embodiment. That is, the DLMOSincludes the drain region comprised of the first n⁻-type drain region10, the second n⁻-type drain region 13, and the n⁺-type drain region 14;the source region comprised of the n⁻-type source region 11 and then⁺-type source region 15; and the gate electrode G formed between thesource and drain regions (in a channel formation region) via the gateinsulating film 8 (see FIGS. 1 and 2, and the like).

The gate electrode G extends in the direction Y as shown in FIG. 23. Asource region is disposed to extend in the direction Y in the regionpositioned on one side of the gate electrode G (on the left side of thegate electrode G in FIG. 23). A drain region is disposed to extend inthe direction Y in the region positioned on the other side of the gateelectrode G (on the right side of the gate electrode G in FIG. 23).

Although not shown in FIG. 23, the metal silicide layer 17 is formedover the drain region, the source region, and the gate electrode Gforming the above LDMOS (see FIGS. 1 and 2, and the like). The sourceregion is electrically coupled to the source plug P1S via the metalsilicide layer 17. The drain region is electrically coupled to the drainplug P1D via the metal silicide layer 17. Although not shown in FIG. 23,the gate electrode G is electrically coupled to the gate plug P1G viathe metal silicide layer 17 (see FIG. 9).

The drain plug P1D is formed in the region positioned on one side of thegate electrode G (on the right side of the gate electrode G as shown inFIG. 23). The source plug P1S is formed in the region positioned on theother side of the gate electrode G (on the left side of the gateelectrode G as shown in FIG. 23).

As shown in FIG. 23, in this embodiment, the drain plug P1D is comprisedof a plurality of separated drain plugs P1D. That is, the separateddrain plugs P1D each having a square pole shape are disposed at firstintervals in the direction Y. In other words, the separated drain plugsP1D disposed in the direction Y have a rectangular pattern shape (shapein the planar view from the upper surface), and are disposed at thepredetermined intervals in the direction Y.

The source plug P1S is comprised of a plurality of separated sourceplugs P1S. Unlike the first embodiment, one separated source plug P1Shas a square pole having the long side in the direction X. In otherwords, the separated source plugs P1S have a rectangular pattern shape(shape in the planar view from the upper surface) having a long side inthe direction X, and are disposed at predetermined intervals in thedirection Y. When the separated source plugs P1S disposed in thedirection Y are defined as the separated source plug column, in thisembodiment, one column of separated source plugs is disposed in theregion on the left side of the gate electrode G.

In this embodiment, one separated drain plug P1D is shifted in thedirection Y to be positioned between two adjacent separated source plugsP1S in the direction Y. In other words, each of the separated drainplugs P1D arranged in parallel in the direction Y, and each of theseparated source plugs P1S arranged in parallel in the direction Y arealternatively arranged in the direction Y. In other words, the separateddrain plugs P1D and the separated source plugs P1S are arranged in ahoundstooth manner.

A drain wiring M1D is disposed over each drain plug P1D. A source wiringM1S is disposed over the source plugs P1S. Although not shown in FIG.23, the gate wiring M1G is disposed over each gate plug P1G (see FIG.9). As shown in FIG. 23, the drain wiring M1D is divided into separateddrain wirings such that each separated drain wiring is disposed over onecorresponding separated drain plug P1D among the separated drain plugsP1D. In other words, the drain wiring M1D has a plurality of separateddrain wirings MID disposed at predetermined intervals (second intervals)in the direction Y.

Cutout portions are provided in the source wiring M1S. That is, as shownin FIG. 23, the source wiring M1S extends in the direction Y as a whole,and parts of the end of the wiring M1S positioned on the drain plug P1Dside among the ends extending in the direction Y recede in the directionX. The receding part is hereinafter referred to as a cutout portion. Thecutout portion is provided to be located between the adjacent separatedsource plugs P1S in the direction Y. As mentioned above, the separateddrain plugs P1D are shifted from the separated source plugs P1S in thedirection Y. The cutout portion is provided in the positioncorresponding to the separated drain plug P1D in the direction Y.

Like the first embodiment, the drain wiring (M2D) is disposed over thedrain wiring M1D via the drain plug P2D, and the drain wiring (M3D) isdisposed thereover via the drain plug P3D. The illustration thereof willbe omitted below. The above drain plug P2D is preferably disposed so asto be located over at least each separated drain wiring M1D. Forexample, the drain plug P2D is formed in the same pattern shape andlayout as those of the separated drain plug P1D shown in FIG. 23. Thedrain wiring (M2D) over the separated drain plug P2D may be linear. Inthis case, the drain plug (P3D) and the drain wiring (M3D) can also belinear. It is apparent that the drain wiring (M2D), the drain plug(P3D), and the drain wiring (M3D) may be separated.

In this embodiment, the separated source plug P1S has a rectangularpattern shape (shape in the planar view from an upper surface) having along side in the direction X, so that a short side of the pattern shapein the direction Y is opposed to the drain plag P1D, which can decreasethe opposed area.

The separation of the drain plug P1D can decrease the opposed areabetween the source plug P1S and the drain plug P1D. Further, theseparation of the drain wiring M1D can also decrease the opposed areabetween the source plug P1S and the drain wiring M1D. Since the cutoutportions are provided in the position corresponding to the separateddrain plugs P1D in the direction Y of the source wiring M1S, thedistance between the source wiring M1S and the separated drain plug P1Dat the cutout portion becomes large, which can reduce the parasiticcapacitance. Further, at the cutout portion, the distance between thesource wiring M1S and the separated drain wiring M1D also becomes large,which can reduce the parasitic capacitance.

The manufacturing method of the semiconductor device of this embodimentdiffers from the first embodiment only in the shape of each pattern andlayout in the formation steps of the source plug P1S, the drain plugP1D, the drain wiring M1D, and the source wiring M1S, and thus adescription of the manufacturing method of this embodiment will beomitted below.

Although in this embodiment, the drain wiring M1D is separated such thatthe separated drain plug P1D corresponds to the separated wiring M1D oneby one, for example, the drain wiring M1D may be separated to step overthe separated drain plugs P1D adjacent thereto in the direction Y. Thus,the drain wiring M1D may be separated every separated drain plug P1D.

Seventh Embodiment

Although in the first embodiment, three columns of separated sourceplugs are provided to make the distance between the separated sourceplug columns (separated source plugs P1S disposed in the direction Y)constant in the direction Y, the separated source plug on apredetermined column may be removed. Like the fifth embodiment, in thisembodiment, <1> the drain plug P1D may be divided into the separateddrain plugs, which may be shifted from the separated source plugs P15 inthe direction Y, <2> the drain wiring M1D may be separated, and <3> thesource wiring MIS may be provided with the cutout portions.

FIG. 24 shows a plan view of the structure of a semiconductor device ofthis embodiment. The structure of the semiconductor device of thisembodiment differs from the structure (see FIGS. 1 to 3) of the firstembodiment in the layout of the source plug P1S, the shape of the drainplug P1D, the shape of the drain wiring M1D, and the shape of the sourcewiring M1S. Now, the structure of these elements will be described belowin detail, but the description of the structure of other parts will beomitted below.

Description of Structure

The semiconductor device of this embodiment has also the LDMOS with thesame structure as that of the first embodiment. That is, the DLMOSincludes the drain region comprised of the first n⁻-type drain region10, the second n⁻-type drain region 13, and the n⁺-type drain region 14;the source region comprised of the n⁻-type source region 11 and then⁺-type source region 15; and the gate electrode G formed between thesource and drain regions (in a channel formation region) via the gateinsulating film 8 (see FIGS. 1 and 2, and the like).

As shown in FIG. 24, the gate electrode G extends in the direction Y.The gate electrode G is disposed such that the source region extends inthe direction Y in the region positioned on one side of the gateelectrode G (on the left side of the gate electrode G in FIG. 24).Further, the gate electrode G is disposed such that the drain regionextends in the direction Y in the region positioned on the other side ofthe gate electrode G (on the right side of the gate electrode G in FIG.24).

Although not shown in FIG. 24, the metal silicide layer 17 is formedover the drain region, the source region, and the gate electrode Gforming the above LDMOS (see FIGS. 1 and 2). The source region iselectrically coupled to the source plug P1S via the metal silicide layer17. The drain region is electrically coupled to the drain plug P1D viathe metal silicide layer 17. Although not shown in FIG. 24, the gateelectrode G is electrically coupled to the gate plug P1G via the metalsilicide layer 17 (see FIG. 9).

The drain plug P1D is formed in the region positioned on one side of thegate electrode G (on the right side of the gate electrode G in FIG. 24),and the source plug P1S is formed in the region positioned on the otherside of the gate electrode G (on the left side of the gate electrode Gin FIG. 24).

As shown in FIG. 24, in this embodiment, the drain plug P1D is comprisedof a plurality of separated drain plugs P1D. That is, the separateddrain plugs P1D each having a square pole shape are arranged at firstintervals in the direction Y. In other words, the pattern shape (theshape in the planar view from the upper surface) of the separated drainplugs P1D disposed in the direction Y is rectangular. The separateddrain plugs P1D are disposed at predetermined intervals in the directionY.

The source plug P1S is comprised of separated source plugs P1S, whichare located in different positions from those of the first embodiment.In the first embodiment shown in FIG. 3, the separated source plugs arearranged in the array in the directions X and Y. For example, in theregion shown in FIG. 3, the separated source plugs are arranged in a 3×3array. In this embodiment, as shown in FIG. 24, the second separatedsource plugs on the first and third columns from the left side in thefigure are removed (which is a decimated structure). In other words, thesecond separated source plugs P1S on the first and third columns fromthe left side in the figure are omitted.

In this way, the source plug on the separated source plug column (on thethird column in the drain plug P1D as shown in FIG. 24) positioned onthe drain plug P1D side is removed to thereby form the separated sourceplugs P1S the number of which is smaller than that of the otherseparated source plug column (second column as shown in FIG. 24).Referring to FIG. 24, the separated source plugs P1S on the separatedsource plug column (third column in FIG. 24) positioned on the drainplug P1D side are arranged on every other column in the direction X withrespect to the other separated source plug column (second column asshown in FIG. 24). The separated source plugs P1S on the first separatesource plug column shown in FIG. 24 are arranged in the same manner. Thefirst separated source plug column is located on the drain plug (notshown) side positioned on the left side of the drain plug P1D shown inFIG. 25 to thereby form the same decimated structure as that on thethird column.

Thus, the distance between the separated source plugs P1S (WP1SY3, orfirst interval) on the separated source plug column (on the third columnof the drain plug P1D shown in FIG. 24) located on the drain plug P1Dside is larger than that between the separated source plugs P1S (WP1SY2,or third interval) in the direction Y on the other separated source plugcolumn (on the second column shown in FIG. 24) (WP1SY3>WP1SY2). Thus,the parasitic capacitance between the source plug P1S and the drain plugP1D can be reduced.

In this embodiment, one separated drain plug P1D is shifted in thedirection Y to be positioned between two adjacent separated source plugsP1S in the direction Y among the separated source plugs P1S more denselyarranged on the separated source plug column (on the second column asshown in FIG. 24).

The drain wiring M1D is disposed over each drain plug P1D. The sourcewiring M1S is disposed over the source plugs P1S. Although not shown inFIG. 24, the gate wiring M1G is disposed over each gate plug P1G (seeFIG. 9). As shown in FIG. 24, the drain wiring MID is divided intoseparated drain wirings such that each separated drain wiring isdisposed over one corresponding separated drain plug P1D among theseparated drain plugs P1D. In other words, the drain wiring M1D has aplurality of separated drain wirings M1D disposed at predeterminedintervals (second intervals) in the direction Y.

Cutout portions are provided in the source wiring M1S. That is, as shownin FIG. 24, the source wiring M1S extends in the direction Y as a whole,and parts of the end of the wiring M1S positioned on the drain plug P1Dside among the ends extending in the direction Y recede in the directionX. The receding part is hereinafter referred to as a cutout portion. Thecutout portion is provided to be located between the adjacent separatedsource plugs P1S in the direction Y more densely arranged on theseparated source plug column (on the second column as shown in FIG. 24).As mentioned above, the separated drain plugs P1D and the separatedsource plugs P1S are shifted from each other in the direction Y. Thecutout portion is located in the position corresponding to the separateddrain plug P1D in the direction Y.

Like the first embodiment, the drain wiring (M2D) is disposed over thedrain wiring 141D via the drain plug P2D, and the drain wiring (M3D) isdisposed thereover via the drain plug P3D. The illustration thereof willbe omitted below. The above drain plug P2D is preferably disposed so asto be located over at least each separated drain wiring M1D. Forexample, the separated drain plug P2D is formed in the same patternshape and layout as those of the separated drain plug P1D as shown inFIG. 24. The drain wiring (M2D) over the separated drain plug P2D may belinear. In this case, the drain plug (P3D) and the drain wiring (M3D)can also be linear. It is apparent that the drain wiring (M2D), thedrain plug (P3D), and the drain wiring (M3D) may be separated.

In this way, the distance between the separated source plugs P1S(WP1SP3) on the separated source plug column (on the third column of thedrain plug P1D shown in FIG. 24) located on the drain plug P1D side islarger than that between the separated source plugs P1S (WP1SY2) in thedirection Y on the other separated source plug column (on the secondcolumn shown in FIG. 24) (WP1SY3>WP1SY2). Thus, the parasiticcapacitance between the source plug P1S and the drain plug P1D can bereduced.

The separation of the drain plug P1D can decrease the opposed areabetween the source plug P1S and the drain plug P1D. The separation ofthe drain wiring MID can decrease the opposed area between the sourceplug P1S and the drain wiring M1D. Since the cutout portions areprovided in the positions corresponding to the separated drain plugs P1Din the direction Y in the source wiring M1S, the distance between thesource wiring MIS and the separated drain plug P1D at the cutout portionbecomes large, which can reduce the parasitic capacitance. At the cutoutportion, the distance between the source wiring MIS and the separateddrain wiring M1D becomes large, which can reduce the parasiticcapacitance.

The manufacturing method of the semiconductor device of this embodimentdiffers from the first embodiment in the pattern shape and layout in theformation steps of the source plug P1S, the drain plug P1D, the drainwiring M1D, and the source wiring M1S, and thus a description thereofwill be omitted below.

Although in this embodiment, the drain wiring M1D is separated such thatthe separated drain plug P1D corresponds to the separated wiring M1D oneby one, for example, the drain wiring M1D may be separated to step overthe separated drain plugs P1D adjacent thereto in the direction Yl. Inthis way, the drain wiring M1D may be separated every separated drainplug P1D.

Eighth Embodiment

Although in the first embodiment, three columns of separated sourceplugs are provided with the distance between the respective separatesource plug columns (separated source plugs P1S disposed in thedirection X) in the direction X set constant, the separated source plugon a predetermined column may be removed. Like the fifth embodiment, <1>the drain plug P1D may be divided into the separated drain plugs, whichmay be shifted from the separated source plugs P1S in the direction Y,<2> the drain wiring M1D may be separated, and <3> the source wiring MISmay be provided with the cutout portions, like the second embodiment.Further, the pattern shape of the source wiring M1S may be devised suchthat the cutout portion of the source wiring M1S becomes larger in theregion with the separated source plugs removed therefrom.

FIG. 25 shows a plan view of the structure of a semiconductor device ofthis embodiment. The structure of this embodiment differs from thestructure (see FIGS. 1 to 3) of the first embodiment in the layout ofthe source plug P1S, the shape of the drain plug P1D, the shape of thedrain wiring M1D, and the shape of the source wiring M1S. Now, thestructure of these elements will be described below in detail, but thedescription of the structure of other parts will be omitted below.

Description of Structure

The semiconductor device of this embodiment has also the LDMOS with thesame structure as that of the first embodiment. That is, the DLMOSincludes the drain region comprised of the first n⁻-type drain region10, the second n⁻-type drain region 13, and the n⁺-type drain region 14;the source region comprised of the n⁻-type source region 11 and then⁺-type source region 15; and the gate electrode G formed between thesource and drain regions (in a channel formation region) via the gateinsulating film 8 (see FIGS. 1 and 2, and the like).

The gate electrode G extends in the direction Y as shown in FIG. 25. Thesource region is disposed to extend in the direction Y in the regionpositioned on one side of the gate electrode G (on the left side of thegate electrode G in FIG. 25). Further, the drain region is disposed toextend in the direction Y in the region positioned on the other side ofthe gate electrode G (on the right side of the gate electrode G in FIG.25).

Although not shown in FIG. 25, the metal silicide layer 17 is formedover the drain region, the source region, and the gate electrode Gforming the above LDMOS (see FIGS. 1 and 2, and the like). The sourceregion is electrically coupled to the source plug P1S via the metalsilicide layer 17. The drain region is electrically coupled to the drainplug P1D via the metal silicide layer 17. Although not shown in FIG. 25,the gate electrode G is electrically coupled to the gate plug P1G viathe metal silicide layer 17 (see FIG. 9).

The drain plugs P1D are formed in the region positioned on one side ofthe gate electrode G (on the right side of the gate electrode G as shownin FIG. 25), and the source plugs P1S are formed in the regionpositioned on the other side of the gate electrode G (on the left sideof the gate electrode G as shown in FIG. 25).

As shown in FIG. 25, in this embodiment, the drain plug P1D is comprisedof a plurality of separated drain plugs P1D. That is, the separateddrain plugs P1D each having the square pole shape are arranged at firstintervals in the direction Y. In other words, the pattern shape (shapein the planar view from an upper surface) of the separated drain plugsP1D disposed in the direction Y is rectangular. The separated drainplugs P1D are disposed at predetermined intervals in the direction Y.

The source plug P1S is comprised of a plurality of separated sourceplugs P1S, which are arranged in different positions from those of thefirst embodiment. That is, in the first embodiment shown in FIG. 3, theseparated source plugs P1S are arranged in an array in the directions Xand Y. For example, in the region shown in FIG. 3, the separated sourceplugs P1S are arranged in a 3×3 array. However, in this embodiment, asshown in FIG. 25, the second separated source plugs on the first andthird columns from the left side in the figure are removed (which is adecimated structure). In other words, the second separated source plugsP1S on the first and third columns from the left side in the figure areomitted.

In this way, the source plug on the separated source plug column (on thethird column in the drain plug P1D shown in FIG. 25) positioned on thedrain plug P1D side is removed to thereby form the separated sourceplugs P1S the number of which is smaller than that of the separatedsource plugs on the other separated source plug column (on the secondcolumn as shown in FIG. 25). Referring to FIG. 25, the separated sourceplugs P1S on the separated source plug column (third column in FIG. 25)positioned on the drain plug P1D side are arranged on every other columnin the direction X with respect to the separated source plugs P1S on theother separated source plug column (second column as shown in FIG. 25).The separated source plugs P1S of the first separated source plug columnshown in FIG. 25 are arranged in the same manner. The first separatedsource plug column is located on the drain plug (not shown) sidepositioned on the left side of the drain plug P1D shown in FIG. 25 tothereby form the same decimated structure as that on the third column.

In this way, the distance between the separated source plugs P1S(WP1SY3, or first interval) on the separated source plug column (on thethird column of the drain plug P1D shown in FIG. 25) located on thedrain plug P1D side is larger than that between the separated sourceplugs P1S (WP1SY2, or third interval) in the direction Y on the otherseparated source plug column (on the second column shown in FIG. 25)(WP1SY3>WP1SY2). Thus, the parasitic capacitance between the source plugP1S and the drain plug P1D can be reduced.

In this embodiment, one separated drain plug P1D is shifted in thedirection Y to be positioned between two adjacent separated plugs P1S inthe direction Y among the separated source plugs P1S more denselydisposed on the separated source plug column (on the second column asshown in FIG. 25).

The drain wiring M1D is disposed over each drain plug P1D. The sourcewiring M1S is disposed over the source plugs P1S. Although not shown inFIG. 25, the gate wiring M1G is disposed over each gate plug P1G (seeFIG. 9). As shown in FIG. 25, the drain wiring M1D is divided intoseparated drain wirings such that each separated drain wiring isdisposed over one corresponding separated drain plug P1D among theseparated drain plugs P1D. In other words, the drain wiring M1D has aplurality of separated drain wirings IUD disposed at predeterminedintervals (second intervals) in the direction Y.

Cutout portions are provided in the source wiring M1S. That is, as shownin FIG. 25, the source wiring M1S extends in the direction Y as a whole,and parts of the end of the wiring M1S positioned on the drain plug P1Dside among the ends thereof extending in the direction Y recede in thedirection X. The receding part is hereinafter referred to as a cutoutportion. The cutout portion is provided to be located between theadjacent separated source plugs P1S in the direction Y. Since in thisembodiment, the separated source plugs P1S on the separated source plugcolumns positioned on the drain plug P1D side (on the first and thirdcolumns as shown in FIG. 25) are removed as mentioned above, the sourcewiring M1S over the columns can be cancelled. Thus, the width of thecutout portion in the direction Y can be increased.

Specifically, the width (WNY) of the cutout portion in the direction Ycan be made larger than the distance (WP1SY2) in the direction Y betweenthe separated source plugs P1S on the separated source plug column thatare more densely disposed (on the second column in FIG. 25) (that is,WP1SY2<WNY).

Like the first embodiment, the drain wiring (M2D) is disposed over thedrain wiring M1D via the drain plug P2D, and further the drain wiring(M3D) is disposed thereover via the drain plug P3D, and thus theillustration of these elements will be omitted below. The drain plug P2Dis preferably disposed over at least each separated drain wiring M1D.For example, the separated drain plugs P2D are formed in the samepattern shape and layout as those of the separated drain plugs P1D shownin FIG. 25. The drain wiring (M2D) over the separated drain plug P2D maybe linear. In this case, the drain plug (P3D) and the drain wiring (M3D)can also be linear. It is apparent that the drain wiring (M2D), thedrain plug (P3D), and the drain wiring (M3D) may be separated.

In this way, the distance between the separated source plugs P1S(WP1SY3) in the direction Y on the separated source plug column (on thethird column shown in FIG. 25) located on the drain plug P1D side islarger than that between the separated source plugs P1S (WP1SY2) in thedirection Y on the other separated source plug column (on the secondcolumn shown in FIG. 25) (WP1SY3>WP1SY2). This arrangement can reducethe parasitic capacitance between the source plug P1S and the drain plugP1D. By increasing the width (WNY) of the cutout portion in thedirection Y, the parasitic capacitance between the source wiring MIS andthe drain plug P1D can be decreased. The parasitic capacitance betweenthe source wiring M1S and the drain wiring M1D can be decreased.

The separation of the drain plug P1D can decrease the opposed areabetween the source plug P1S and the drain plug P1D. The separation ofthe drain wiring M1D can decrease the opposed area between the sourceplug P1S and the drain wiring MID. The provision of the cutout portioncorresponding to the separated drain plug P1D in the direction Y at thesource wiring MIS increases the distance between the source wiring MISand the separated drain plug P1D at the cutout portion, which candecrease the parasitic capacitance therebetween. Further, at the cutoutportion, the distance between the source wiring M1S and the separateddrain wiring M1D also becomes large, which can reduce the parasiticcapacitance. In this embodiment, the separated source plugs on theseparated source plug columns (on the first and third columns shown inFIG. 25) positioned on the drain plug P1D side are removed, whereby theparts of the source wiring M1S located over the cutout portions can beomitted. The width of the cutout portion in the direction Y can beincreased to further reduce the parasitic capacitance.

The manufacturing method of the semiconductor device of this embodimentdiffers from the first embodiment in the pattern shape and the layout inthe formation steps of the source plug P1S, the drain plug P1D, thedrain wiring M1D, and the source wiring M1S. Thus, a description of themanufacturing method will be omitted below.

Although in this embodiment, the drain wiring M1D is separated such thatthe separated drain plug P1D corresponds to the separated drain wiringM1D one by one, for example, the drain wiring M1D may be separated tostep over the separated drain plugs P1D adjacent thereto in thedirection Yl. As mentioned above, the drain wiring M1D may be separatedevery separated drain plug P1D.

Ninth Embodiment

Although in the first embodiment, the source wiring M1S is disposed overthe source plug P1S, the source wiring M1S may be omitted. Like theseventh or eighth embodiment, <1> the separated source plug on apredetermined column among the three separated source plug columns maybe removed, <2> the drain plug P1D may be divided into the separateddrain plugs, which may be shifted from the separated source plugs P1S inthe direction Y, and <3> the drain wiring M1D may be separated.

FIG. 26 shows a plan view of the structure of a semiconductor device ofthis embodiment. The structure of this embodiment differs from thestructure (see FIGS. 1 to 3) of the first embodiment in the layout ofthe source plug P1S, the shape of the drain plug P1D, the shape of thedrain wiring M1D, and the structure without formation of the sourcewiring M1S. Now, the structure of these elements will be descried indetail below, but the description of the structure of other parts willbe omitted below.

Description of Structure

The semiconductor device of this embodiment also has the LDMOS with thesame structure as that of the first embodiment. That is, the DLMOSincludes the drain region comprised of the first n⁻-type drain region10, the second n⁻-type drain region 13, and the n⁺-type drain region 14;the source region comprised of the n⁻-type source region 11 and then⁺-type source region 15; and the gate electrode G formed between thesource and drain regions (in a channel formation region) via the gateinsulating film 8 (see FIGS. 1 and 2, and the like).

The gate electrode G extends in the direction Y as shown in FIG. 26. Asource region is disposed to extend in the direction Y in the regionpositioned on one side of the gate electrode G (on the left side of thegate electrode G in FIG. 26). A drain region is disposed to extend inthe direction Y in the region positioned on the other side of the gateelectrode G (on the right side of the gate electrode G in FIG. 26).

Although not shown in FIG. 26, the metal silicide layer 17 is formedover the drain region, the source region, and the gate electrode Gforming the above LDMOS (see FIG. 1, and the like). The source region iselectrically coupled to the source plug P1S via the metal silicide layer17. The drain region is electrically coupled to the drain plug P1D viathe metal silicide layer 17. Although not shown in FIG. 26, the gateelectrode G is electrically coupled to the gate plug P1G via the metalsilicide layer 17 (see FIG. 9).

The drain plugs P1D are formed in the region positioned on one side ofthe gate electrode G (on the right side of the gate electrode G as shownin FIG. 26). The source plugs P1S are formed in the region positioned onthe other side of the gate electrode G (on the left side of the gateelectrode Gas shown in FIG. 26).

As shown in FIG. 26, in this embodiment, the drain plug P1D is comprisedof a plurality of separated drain plugs P1D. That is, the separateddrain plugs P1D each having a square pole shape are arranged at firstintervals in the direction Y. In other words, the separated drain plugsP1D disposed in the direction Y have a rectangular pattern shape (shapein the planar view from the upper surface), and are disposed at thepredetermined intervals in the direction Y.

The source plug P1S is comprised of separated source plugs P1S, whichare located in different positions from those of the first embodiment.That is, in the first embodiment shown in FIG. 3, the separated sourceplugs are arranged in the array in the directions X and Y. For example,in the region shown in FIG. 3, the separated source plugs P1S arearranged in a 3×3 array in the region shown in FIG. 3. In thisembodiment, as shown in FIG. 26, the second separated source plugs onthe first and third columns from the left side in the figure are removed(which is a decimated structure). In other words, the second separatedsource plugs P1S on the first and third columns from the left side inthe figure are omitted.

In this way, the separated source plug on the separated source plugcolumn (on the third column in the drain plug P1D as shown in FIG. 26)positioned on the drain plug P1D side is removed to thereby form theseparated source plugs P1S the number of which is smaller than that ofthe separated source plugs on the other separated source plug column(second column as shown in FIG. 26). Referring to FIG. 26, the separatedsource plugs P1S of the separated source plug column (third column inFIG. 26) positioned on the drain plug P1D side are arranged on everyother column in the direction X with respect to the separated sourceplugs P1S on the other separated source plug column (second column asshown in FIG. 26). The separated source plugs P1S on the first separatesource plug column shown in FIG. 26 are arranged in the same manner. Thefirst separated source plug column is located on the drain plug (notshown) side positioned on the left side of the drain plug P1D shown inFIG. 26 to thereby form the same decimated structure as that on thethird column.

Thus, the distance between the separated source plugs P1S (WP1SY3 orfirst interval) in the direction Y on the separated source plug column(that is, on the third column in the drain plug P1D shown in FIG. 26)located on the drain plug P1D side is larger than that between theseparated source plugs P1S (WP1SY2, third interval) in the direction Yon the other separated source plug column (on the second column shown inFIG. 26) (WP1SY3>WP1SY2). This arrangement can reduce the parasiticcapacitance between the source plug P1S and the drain plug P1D.

In this embodiment, one separated drain plug P1D is shifted in thedirection Y to be positioned between two adjacent separated plugs P1S inthe direction Y, among the separated source plugs P1S on the separatedsource plug column more densely disposed (on the second column as shownin FIG. 26).

A drain wiring M1D is disposed over the drain plugs P1D. Although notshown in FIG. 26, the gate wiring M1G is disposed over the gate plug P1G(see FIG. 9). As shown in FIG. 26, the drain wiring M1D is divided intoseparated drain wirings such that each separated drain wiring isdisposed over the corresponding separated drain plug P1D among theseparated drain plugs P1D. In other words, the drain wiring M1D has aplurality of separated drain wirings M1D disposed at predeterminedintervals (second intervals) in the direction Y.

In this embodiment, the source wiring M1S on the source plugs P1S isomitted. In other words, the source wiring M1S for establishingelectrical coupling to the source plug P1S is not formed on the sourceplug P1S. That is, the upper surface of the source plug P1S is coveredwith an insulating film (interlayer insulating film) 24.

As described in the first embodiment, the source electrode SE is formedat the back side of the substrate 1 (see FIGS. 1, 2, and 14). Theelectrical coupling between a coupling part of a wiring board and thesource region is established via the above source electrode SE. Thesource plug P1S and the source wiring M1S are formed for the purpose ofcurrent pass and reduction in resistance of the source region. Thus,even the omission of the source wiring M1S does not affect the operationof the LDMOS.

Like the first embodiment, the drain wiring (M2D) is disposed over thedrain wiring M1D via a drain plug P2D, and further, the drain wiring(M3D) is disposed thereover via the drain plug P3D. The illustrationthereof will be omitted below. The above drain plug P2D is preferablydisposed so as to be located over at least each separated drain wiringM1D. For example, the separated drain plugs P2D having the same patternshape and layout as those of the separated drain plugs P1D shown in FIG.26 are formed. The drain wiring (M2D) over the separated drain plug P2Dmay be linear. In this case, the drain plug (P3D) and the drain wiring(M3D) can also be linear. It is apparent that the drain wiring (M2D),the drain plug (P3D), and the drain wiring (M3D) may be separated.

Thus, the omission of the source wiring M1S can set the parasiticcapacitance between the source wiring M1S and the drain plug P1D to zero(0), and further can set the parasitic capacitance between the sourcewiring M1S and the drain wiring M1D to zero (0).

The separation of the drain plug P1D can decrease the opposed areabetween the source plug P1S and the drain plug P1D. Further, theseparation of the drain wiring M1D can also decrease the opposed areabetween the source plug P1S and the drain wiring M1D.

The manufacturing method of the semiconductor device of this embodimentdiffers from the method of the first embodiment in each pattern shapeand layout in the formation steps of the source plug P1S, the drain plugP1D, and the drain wiring M1D, specifically, in that only the formationstep of the source wiring M1S is omitted. Thus, a description of themanufacturing method will be omitted below.

Although in this embodiment, the drain wiring M1D is separated such thatthe separated drain plug P1D corresponds to the separated drain wiringM1D one by one, for example, the drain wiring M1D may be separated tostep over the separated drain plugs P1D adjacent thereto in thedirection Y. As mentioned above, the drain wiring M1D may be separatedevery separated drain plug P1D.

The present invention made by the inventors have been specificallydescribed based on the embodiments disclosed herein. It is apparent thatthe invention is not limited thereto, and that various changes can bemade to the disclosed embodiments without departing from the scope ofthe invention.

For example, the drain plug P1D and the drain wiring M1D of the firstembodiment shown in FIG. 3 can be used instead of the drain plug P1D andthe drain wiring M1D of the fourth embodiment shown in FIG. 21.

For example, the source wiring M1S of the first embodiment shown in FIG.3 may be used instead of the source wiring M1S of the fifth embodimentshown in FIG. 22.

The drain plug P1D and the drain wiring M1D of the first embodimentshown in FIG. 3 may be used instead of the drain plug P1D and the drainwiring M1D of the sixth embodiment shown in FIG. 23. The drain plug P1Dand the drain wiring M1D of the fourth embodiment shown in FIG. 21 maybe used instead of the drain plug P1D and the drain wiring M1D of thesixth embodiment shown in FIG. 23.

The drain plug P1D and the drain wiring M1D of the first embodimentshown in FIG. 3 may be used instead of the drain plug P1D and the drainwiring M1D of the seventh embodiment shown in FIG. 24. The drain plugP1D and the drain wiring M1D of the fourth embodiment shown in FIG. 21may be used instead of the drain plug P1D and the drain wiring M1D ofthe seventh embodiment shown in FIG. 24.

The drain plug P1D and the drain wiring MID of the first embodimentshown in FIG. 3 may be used instead of the drain plug P1D and the drainwiring M1D of the eighth embodiment shown in FIG. 25. The drain plug P1Dand the drain wiring M1D of the fourth embodiment shown in FIG. 21 maybe used instead of the drain plug P1D and the drain wiring M1D of theeighth embodiment shown in FIG. 25.

The drain plug P1D and the drain wiring M1D of the first embodimentshown in FIG. 3 may be used instead of the drain plug P1D and the drainwiring M1D of the ninth embodiment shown in FIG. 26. The drain plug P1Dand the drain wiring M1D of the fourth embodiment shown in FIG. 21 maybe used instead of the drain plug P1D and the drain wiring M1D of theninth embodiment shown in FIG. 26. The source plug P1S of the firstembodiment shown in FIG. 3 may be used instead of the source plug P2S ofthe ninth embodiment shown in FIG. 26.

In the above embodiments, the source backside electrode SE is formed andthe coupling to the wiring board is established from the back side ofthe substrate. In the structures other than the example of the structureassociated with the above ninth embodiment, a source pad region may beformed at the upper surface of the substrate without forming the sourcebackside electrode SE. For example, a multilayered wiring including asecond layer wiring coupled to the source wiring M1S and a third layerwiring may be provided over the source wiring M1S. By using a part ofthe uppermost layer wiring as a source pad region, the source pad regionmay be coupled to an external connection terminal of the wiring boardvia a wire (gold wire) and the like.

Thus, the invention is not limited to the above embodiments, and variousmodifications and changes can be made to the disclosed embodimentswithout departing from the scope of the invention.

The present invention relates to semiconductor devices, and morespecifically, the techniques effectively applied to the semiconductordevice having a LDMOS.

What is claimed is:
 1. A semiconductor device, comprising: (a) alaterally diffused MISFET, including: (a1) a gate electrode disposedover a first surface of a semiconductor substrate via a gate insulatingfilm to extend in a first direction; and (a2) a source region disposedin the semiconductor substrate on one side of the gate electrode, and adrain region disposed in the semiconductor substrate on the other sideof the gate electrode; (b) a source contact disposed in a second regionlocated on the one side of the gate electrode over the semiconductorsubstrate to be electrically coupled to the source region; (c) a sourcewiring disposed over the source contact; (d) a drain contact disposed ina first region located on the other side of the gate electrode over thesemiconductor substrate to be electrically coupled to the drain region;and (e) a drain wiring disposed over the drain contact, wherein thedrain contact includes a plurality of separated drain contacts disposedat first intervals in the first direction in the first region, whereinthe source contact includes a plurality of separated source contactsdisposed at the first intervals in the first direction in the secondregion, wherein each of the separated drain contacts is shifted in thefirst direction so as to be located between the separated sourcecontacts in the first direction, wherein the drain wiring includes aplurality of separated drain wirings arranged at second intervals in thefirst direction in the first region, wherein the source wiring includesa cutout portion formed by causing one end of the source wiring on thedrain contact side among ends thereof extending in the first directionto recede in a second direction intersecting the first direction, andwherein the cutout portion is disposed between the separated sourcecontacts.
 2. The semiconductor device according to claim 1, wherein thesource wiring is linearly disposed in the second region to extend in thefirst direction so as to cover the separated source contacts.
 3. Asemiconductor device, comprising: (a) a laterally diffused MISFET,including: (a1) a gate electrode disposed over a first surface of asemiconductor substrate via a gate insulating film to extend in a firstdirection; and (a2) a source region disposed in the semiconductorsubstrate on one side of the gate electrode, and a drain region disposedin the semiconductor substrate on the other side of the gate electrode;(b) a source contact disposed in a second region located on the one sideof the gate electrode over the semiconductor substrate to beelectrically coupled to the source region; (c) a source wiring disposedover the source contact; (d) a drain contact disposed in a first regionlocated on the other side of the gate electrode over the semiconductorsubstrate to be electrically coupled to the drain region; and (e) adrain wiring disposed over the drain contact, wherein the drain contactincludes a plurality of separated drain contacts disposed at firstintervals in the first direction in the first region, wherein the sourcecontact includes a plurality of separated source contacts disposed atthe first intervals in the first direction in the second region, whereineach of the separated drain contacts is shifted in the first directionso as to be located between the separated source contacts in the firstdirection, wherein the separated source contact has a width in thesecond direction intersecting the first direction larger than that inthe first direction, wherein the drain wiring includes a plurality ofseparated drain wirings arranged at second intervals in the firstdirection in the first region, wherein the source wiring includes acutout portion formed by causing one end of the source wiring on thedrain contact side among ends thereof extending in the first directionto recede in a second direction intersecting the first direction, andwherein the cutout portion is disposed between the separated sourcecontacts.
 4. The semiconductor device according to claim 3, wherein thesource wiring is linearly disposed in the second region to extend in thefirst direction so as to cover the separated source contacts.
 5. Asemiconductor device, comprising: (a) a laterally diffused MISFET,including: (a1) a gate electrode disposed over a first surface of asemiconductor substrate via a gate insulating film to extend in a firstdirection; and (a2) a source region disposed in the semiconductorsubstrate on one side of the gate electrode, and a drain region disposedin the semiconductor substrate on the other side of the gate electrode;(b) a source contact disposed in a second region located on the one sideof the gate electrode over the semiconductor substrate to beelectrically coupled to the source region; (c) a source wiring disposedover the source contact; (d) a drain contact disposed in a first regionlocated on the other side of the gate electrode over the semiconductorsubstrate to be electrically coupled to the drain region; and (e) adrain wiring disposed over the drain contact, wherein the drain contactincludes a plurality of separated drain contacts disposed at firstintervals in the first direction in the first region, wherein the sourcecontact includes a plurality of separated source contacts disposed atthe first intervals in the first direction in the second region, whereineach of the separated drain contacts is shifted in the first directionso as to be located between the separated source contacts in the firstdirection, wherein the source contacts include a first separated sourcecontact column and a second separated source contact column, wherein thefirst separated source contact column includes a plurality of separatedsource contacts arranged at first intervals in the first direction,wherein the second separated source contact column includes a pluralityof separated source contacts arranged in the first direction at thirdintervals smaller than the first intervals, and wherein the firstseparated source contact column is disposed closer to the drain contactside than to the second separated source contact column.
 6. Thesemiconductor device according to claim 5, wherein the drain wiringincludes a plurality of separated drain wirings arranged at secondintervals in the first direction in the first region.
 7. Thesemiconductor device according to claim 6, wherein the source wiringincludes a cutout portion formed by causing one end of the source wiringon the drain contact side among ends thereof extending in the firstdirection to recede in a second direction intersecting the firstdirection, and wherein the cutout portion is disposed to correspond to aposition of each of the separated drain contacts in the first direction.8. The semiconductor device according to claim 5, wherein the sourcewiring includes a cutout portion formed by causing one end of the sourcewiring on the drain contact side among ends thereof extending in thefirst direction to recede in a second direction intersecting the firstdirection, and wherein the cutout portion has a width in the firstdirection larger than the first interval.